STTH30R04WY STMicroelectronics

STTH30R04-Y Automotive ultrafast recovery diode Datasheet - production data Features Ultrafast switching A K Low reverse current Low thermal resistance Reduces switching and conduction losses High junction temperature AEC-Q101 qualified A A K K ECOPACK 2 compliant component TO-220AC DO-247 STTH30R04DY STTH30R04WY Description The compromise-free, high quality design of this diode has produced a device with low leakage Table 1. Device summary current, regularly reproducible characteristics and Symbol Value intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand I 30 A F(AV) long term reliability. V 400 V RRM T 175 C j (max) V 1.0 V F (typ) t 24 ns rr (typ) September 2013 DocID024454 Rev 1 1/10 This is information on a product in full production. www.st.com 10Characteristics STTH30R04-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM I RMS forward current 50 A F(RMS) I Average forward current, = 0.5 TO-220AC / DO-247 T = 135 C 30 A F(AV) c Surge non repetitive forward I t = 10 ms Sinusoidal 280 A FSM p current T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case TO-220AC / DO-247 0.8 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit T = 25 C 15 j (1) I Reverse leakage current T = 100 C V = V 3 30 A R j R RRM T = 125 C 15 150 j T = 25 C 1.35 j I = 15 A F T = 150 C 0.83 1.04 j (2) V Forward voltage drop T = 25 C 1.55 V F j T = 100 C I = 30 A 1.32 j F T = 150 C 1.0 1.25 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.95 x I + 0.01 x I F(AV) F (RMS) 2/10 DocID024454 Rev 1