STTH3R06 Datasheet 600 V - 3 A high efficiency ultrafast diode A Features K Ultrafast switching A A Low forwarded voltage drop Low thermal resistance Low leakage current (platinium doping) Planar technology K K ECOPACK compliant SMB SMC Applications A Switching diode Auxiliary power supply K Description The STTH3R06, which uses ST ultrafast high voltage planar technology, is specially DO-201AD suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. Product status STTH3R06 Product summary Symbol Value I F(AV) 3 A V 600 V RRM T 175 C j(max.) V 1.00 V F(typ.) t 35 ns rr(max.) DS3697 - Rev 4 - October 2021 www.st.com For further information contact your local STMicroelectronics sales office.STTH3R06 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Repetitive peak reverse voltage 10 A F(RMS) T = 80 C DO-201AD L I T = 55 C Average forward current = 0.5, square wave SMB 3 A F(AV) L T = 80 C SMC L DO-201AD 55 I Surge non repetitive forward current t = 10 ms sinusoidal A FSM p SMB / SMC 45 T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature +175 C j Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit SMC 20 Junction to lead R SMB 25 th(j-l) C/W Junction to lead 20 Lead length = 10 mm DO-201AD R Junction to ambient 75 th(j-a) For more information, refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 3 j (1) I V = V Reverse leakage current A R R RRM T = 150 C - 15 100 j T = 25 C - 1.7 j (2) I = 3 A V Forward voltage drop V F F T = 150 C - 1.0 1.25 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.03 x I + 0.09 x I F(AV) F (RMS) For more information, refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS3697 - Rev 4 page 2/14