STTH4R02RL STMicroelectronics

STTH4R02 Ultrafast recovery diode Features A K Very low conduction losses K Negligible switching losses Low forward and reverse recovery times A A High junction temperature K K TO-220AC TO-220FPAC Description STTH4R02D STTH4R02FP The STTH4R02 uses ST s new 200 V planar Pt doping technology, and it is specially suited for K switching mode base drive and transistor circuits. Packaged in TO-220AC, TO-220FPAC, DPAK, A A SMB, SMC, and DO-201AB, this device is intended for use in low voltage, high frequency K NC inverters, free wheeling and polarity protection. DPAK SMB STTH4R02B STTH4R02U A A K K DO-201AB SMC STTH4R02 STTH4R02S Table 1. Device summary I 4 A F(AV) V 200 V RRM T 175 C j (max) V (typ) 0.76 V F t (typ) 16 ns rr July 2010 Doc ID 12360 Rev 4 1/13 www.st.com 13Characteristics STTH4R02 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise stated) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM TO-220AC DPAK I Forward rms current SMB / SMC 70 A F(RMS) TO-220FPAC DO-201AB TO-220AC T = 160 C c DPAK T = 160 C c SMB T = 95 C Average forward current, lead I 4A F(AV) = 0.5 SMC T = 95 C lead TO-220FPAC T = 150 C c DO-201AB T = 95 C lead Surge non repetitive forward I t = 10 ms sinusoidal 70 A FSM p current T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameters Symbol Parameter Value Unit TO-220AC / DPAK 3.5 R Junction to case th(j-c) TO-220FPAC 6.5 SMB 20 C/W R Junction to lead DO-201AB 20 th(j-l) SMC 20 2/13 Doc ID 12360 Rev 4