STTH602CT STMicroelectronics

STTH602C Ultrafast recovery diode Main product characteristics I 2 x 3 A F(AV) V 200 V RRM T (max) 175 C j V (typ) 0.80 V F A1 t (typ) 14 ns K rr A2 Features and benefits Suited for SMPS Low losses Low forward and reverse recovery time A2 A2 High surge current capability K A1 A1 K High junction temperature insulated package: TO-220FPAB TO-220AB TO-220FPAB STTH602CT STTH602CFP Description Dual center tap diode suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220AB and TO-22FPAB, this device is intended for use in low voltage high frequency inverters, free wheeling and polarity protection. Order codes Part Number Marking STTH602CT STTH602C STTH602CFP STTH602C April 2006 Rev 1 1/9 www.st.comCharacteristics STTH602C 1 Characteristics Table 1. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I RMS forward current 22 A F(RMS) Per diode T = 160 C 3 c TO-220AB A Per device T = 155 C 6 c I Average forward current, = 0.5 F(AV) Per diode T = 150 C 3 c TO-220FPAB A Per device T = 140 C 6 c I Surge non repetitive forward current t = 10 ms Sinusoidal 60 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit Per diode 5 TO-220AB Per device 3.0 R Junction to case th(j-c) Per diode 7.5 C/W TO-220FPAB Per device 5.25 TO-220AB Per diode 1 R Coupling th(c) TO-220FPAB Per diode 3 When the two diodes 1 and 2 are used simultaneously: Tj(diode 1) = P (diode 1) X R (Per diode) + P (diode 2) x R th(j-c) th(c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Typ Max. Unit T = 25 C 3 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 3 30 j T = 25 C 0.98 1.1 j I = 3 A F T = 150 C 0.8 0.95 j (2) V Forward voltage drop V F T = 25 C 1.1 1.25 j I = 6 A F T = 150 C 0.9 1.05 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.85 x I + 0.033 I F(AV) F (RMS) 2/9