STTH60R04 Ultrafast recovery diode Main product characteristics I 60 A F(AV) V 400 V RRM A K T 175 C j V (typ) 0.95 V F t 31 ns rr (typ) Features and benefits Very low switching losses A K High frequency and/or high pulsed current DO-247 operation STTH60R04W High junction temperature Description The STTH60R04 series uses ST s new 400 V planar Pt doping technology. The STTH60R04 is specially suited for switching mode base drive and Order codes transistor circuits. Part Number Marking Available in a through-the-hole package, this STTH60R04W STTH60R04W device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM V Non repetitive peak reverse voltage 400 V RSM I RMS forward current 100 A F(RMS) I Average forward current, = 0.5 T = 110 C 60 A F(AV) c I Repetitive peak forward current t = 5 s F = 1 kHz square 375 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 650 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j March 2007 Rev 1 1/7 www.st.comCharacteristics STTH60R04 1 Characteristics Table 2. Thermal parameters Symbol Parameter Value Unit R Junction to case 0.7 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit T = 25 C 60 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 60 600 j T = 25 C 1.5 j (2) V Forward voltage drop T = 100 C I = 60 A 1.05 1.3 V F j F T = 150 C 0.95 1.2 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.9 x I + 0.005 x I F(AV) F (RMS) Table 4. Dynamic characteristics Test conditions Symbol Parameter Min Typ Max Unit I = 1 A, dI /dt = -50 A/s, F F 80 V = 30 V, T = 25 C R j I = 1 A, dI /dt = -100 A/s, F F t Reverse recovery time 40 55 ns rr V = 30 V, T = 25 C R j I = 1 A, dI /dt = -200 A/s, F F 31 45 V = 30 V, T = 25 C R j I = 60 A, dI /dt = -200 A/s, F F I Reverse recovery current 11 16 A RM V = 320 V, T = 125 C R j I = 60 A, dI /dt = -200 A/s, F F S Softness factor 0.4 V = 320 V, T = 125 C R j I = 60 A, dI /dt = 100 A/s F F t Forward recovery time 800 ns fr V = 1.1 x V , T = 25 C FR Fmax j I = 60 A dI /dt = 100 A/s F F V Forward recovery voltage 3.2 V FP T = 25 C j 2/7