STTH6010-Y Automotive ultrafast recovery - high voltage diode Datasheet - production data Description The high quality design of this diode has . produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. These diodes also fit into auxiliary functions such . as snubber, bootstrap, and demagnetization applications. 2 The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. Features AEC-Q101 qualified Table 1. Device summary Ultrafast, soft recovery I 60 A F(AV) Very low conduction and switching losses V 1000 V RRM High frequency and/or high pulsed current T (max.) 175 C j operation V (typ) 1.3 V F High reverse voltage capability t (typ) 49 ns rr High junction temperature ECOPACK 2 compliant component April 2015 DocID018924 Rev 2 1/9 This is information on a product in full production. www.st.comCharacteristics STTH6010-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I Forward rms current 80 A F(RMS) I Average forward current T = 75 C, = 0.5, square wave 60 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 450 A FRM p I Surge non repetitive forward current t = 10 ms sinusoidal 400 A FSM p T Storage temperature range -65 to + 175 C stg T Operating junction temperature range -40 to + 175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 0.78 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -20 j (1) I Reverse leakage current V = V A R R RRM T = 125 C - 20 200 j T = 25 C -2.0 j (2) V Forward voltage drop T = 100 C I = 60 A - 1.4 1.8 V F j F T = 150 C - 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.0067 I F(AV) F (RMS) 2/9 DocID018924 Rev 2