X-On Electronics has gained recognition as a prominent supplier of STTH60L06TV1 Rectifiers across the USA, India, Europe, Australia, and various other global locations. STTH60L06TV1 Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

STTH60L06TV1 STMicroelectronics

STTH60L06TV1 electronic component of STMicroelectronics
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Part No.STTH60L06TV1
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: Rectifiers POWER MOSFET
Datasheet: STTH60L06TV1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 21.997 ea
Line Total: USD 22 
Availability - 6
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 21.997
30 : USD 21.0638

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the STTH60L06TV1 from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STTH60L06TV1 and other electronic components in the Rectifiers category and beyond.

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STTH60L06TV Turbo 2 ultrafast high voltage rectifier Main product characteristics I 2 x 40 A F(AV) A1 K1 A1 K2 V 600 V RRM T 150 C j V (typ) 1.30 V F A2 K2 K1 A2 t (typ) 50 ns rr STTH60L06TV2 STTH60L06TV1 Features and benefits A1 A1 K1 K2 Ultrafast switching Low reverse current A2 K1 Low thermal resistance A2 K2 Reduces switching & conduction losses ISOTOP Insulated package: Electrical insulation = 2500 V RMS Capacitance = 45 pF Order codes Description Part Number Marking The STTH60L06TV, which is using ST Turbo 2 600V technology, is specially suited for use in STTH60L06TV1 STTH60L06TV1 switching power supplies, and industrial STTH60L06TV2 STTH60L06TV2 applications (such as welding), as rectification diode. Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I RMS forward current 100 A F(RMS) T = 75 C per diode 30 A c I Average forward current, = 0.5 F(AV) T = 70 C per diode 40 c I Surge non repetitive forward current t = 10 ms Sinusoidal 210 A FSM p T Storage temperature range -55 to + 150 C stg T Maximum operating junction temperature 150 C j October 2006 Rev 3 1/7 www.st.comCharacteristics STTH60L06TV 1 Characteristics Table 2. Thermal parameters Symbol Parameter Value Unit Per diode 1.60 R Junction to case th(j-c) Total 0.85 C/W R Coupling thermal resistance 0.1 th(c) When the diodes are used simultaneously: T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 25 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 25 250 j T = 25 C 1.55 j (2) V Forward voltage drop I = 60 A V F F T = 150 C 1.0 1.25 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.95 x I + 0.010 I F(AV) F (RMS) Table 4. Dynamic characteristics (per diode) Test conditions Symbol Parameter Min. Typ Max. Unit I = 0.5 A, I = 0.25 A F rr 65 I = 1 A, T = 25 C R j t Reverse recovery time ns rr I = 1 A, dI /dt = 50 A/s, F F 65 90 V = 30 V, T = 25 C R j I = 30 A, dI /dt = 100 A/s, F F I Reverse recovery current 11.5 16 A RM V = 400 V, T = 125 C R j I = 30 A dI /dt = 100 A/s F F t Forward recovery time 500 ns fr V = 1.1 x V , T = 25 C FR Fmax j I = 30 A, dI /dt = 100 A/s, F F V Forward recovery voltage 2.5 V FP V = 1.1 x V , T = 25 C FR Fmax j 2/7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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