STTH3R04S STMicroelectronics

STTH3R04 Ultrafast recovery diode Features A K Negligible switching losses Low forward and reverse recovery times High junction temperature DO-15 DO-201AD STTH3R04Q STTH3R04 Description Band indicates cathode side. The STTH3R04 series uses ST s new 400 V planar Pt doping technology. The STTH3R04 is specially suited for switching mode base drive and transistor circuits. SMC SMB Packaged in axial and surface mount packages, STTH3R04S STTH3R04U this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity Table 1. Device summary protection. I 3 A F(AV) V 400 V RRM T 175 C j (max) V 0.9 V F (typ) t 18 ns rr (typ) May 2008 Rev 1 1/10 www.st.comCharacteristics STTH3R04 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM DO-15 T = 70 C lead DO-201AD T = 80 C lead I Average forward current, = 0.5 3.0 A F(AV) SMB T = 70 C lead SMC T = 100 C lead I Surge non repetitive forward current t = 10 ms Sinusoidal 60 A FSM p T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature 175 C j 1. On infinite heatsink with 10 mm lead length Table 3. Thermal parameters Symbol Parameter Value Unit DO-15 25 Lead length = 10 mm R Junction to lead th(j-l) on infinite heatsink DO-201AD 22 C/W SMB 25 R Junction to lead th(j-l) SMC 17 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min Typ Max Unit T = 25 C 5 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 5 50 j T = 25 C 1.5 j (2) V Forward voltage drop T = 100 C I = 3.0 A 1.0 1.25 V F j F T = 150 C 0.9 1.15 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.9 x I + 0.083 x I F(AV) F (RMS) 2/10