STTH4L06 STMicroelectronics

STTH4L06 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description This device uses ST Turbo 2 600 V technology A K and is specially suited for use as a boost diode in discontinuous or critical mode power factor A correction. Packaged in DO-201AD it is ideal for use as freewheeling diode in power supplies and other power switching applications. Table 1: Device summary DO-201AD K Symbol Value I 4 A F(AV) VRRM 600 V T (max.) 175 C j Features VF (typ.) 0.9 V Ultrafast switching Low forward voltage drop t (typ.) 40 ns rr Low leakage current (platinum doping) High operating junction temperature January 2017 DocID16276 Rev 2 1/8 www.st.com This is information on a product in full production. Characteristics STTH4L06 1 Characteristics Table 2: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V I Forward rms current 10 A F(RMS) IF(AV) Average forward current 4 A t = 8.3 ms sinusoidal IFSM Surge non repetitive forward current p 80 A T Storage temperature range -65 to +175 C stg Tj Maximum operating junction temperature 175 C Table 3: Thermal parameters Maximum Symbol Parameter Unit values R Junction to lead 20 th(j-l) Terminal length = 10 mm C/W R Junction to ambient 75 th(j-a) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Tj = 25 C - - 3 (1) IR Reverse leakage current VR = VRRM A T = 150 C - 15 100 j Tj = 25 C - 1.30 IF = 3 A (2) V Forward voltage drop T = 150 C - 0.85 1.05 V F j Tj = 150 C IF = 4 A - 0.90 1.10 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the maximum conduction losses, use the following equation: 2 P = 0.92 x IF(AV) + 0.0045 x IF (RMS) 2/8 DocID16276 Rev 2