STTH4R06DEE-TR STMicroelectronics

STTH4R06DEE Turbo 2 ultrafast recovery diode Datasheet production data Features NC Very low switching losses A K High frequency and high pulse current A operation A Low thermal resistance A NC High junction temperature A A A A A ECOPACK 2 compliant component NC Description K K The STTH4R06 series uses STs new 600 V planar Pt doping technology. The STTH4R06 is specially suited for switching mode base drive and PowerFLAT(3.3 x 3.3) STTH4R06DEE-TR transistor circuits. Packaged in PowerFLAT, this device is intended for use in low profile applications. Table 1. Device summary Symbol Value I 4 A F(AV) V 600 V RRM T (max) 150 C j V (typ) 1.0 V F T (typ) 30 ns RR TM: PowerFLAT is a trademark of STMicroelectronics September 2012 Doc ID 023262 Rev 1 1/8 This is information on a product in full production. www.st.com 8Characteristics STTH4R06DEE 1 Characteristics Table 2. Absolute ratings (limiting values T = 25 C unless otherwise specified) amb Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward rms current 15 A F(RMS) I Average forward current Tc = 120 C, = 0.5 4 A F(AV) I Surge non repetitive forward current tp = 10 ms sinusoidal 60 A FSM T Storage temperature range -65 to +150 C stg Tj Maximum operating junction temperature 150 C Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 4.5 C/W th(j-c) Junction to ambient on printed circuit board (with recommended R 250 C/W th(j-a) footprint, copper thickness = 35 m) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -3A Reverse leakage j (1) I V = V R R RRM current T = 125 C - 3 30 A j T = 25 C I = 4A 1.30 1.70 j F (2) V Forward voltage drop V F T = 150 C - 1.0 1.25 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1 x I + 0.062 x I F(AV) F (RMS) Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Reverse recovery I 5.5 7.5 A I = 4 A, V = 400 V, RM F R current T = 125 C j dl /dt = -200 A/s F S Softness factor 2 factor I = 1A, V = 30 V, F R 35 50 dl /dt = -50 A/s F t Reverse recovery time T = 25 C ns rr j I = 1A, V = 30 V, F R 30 40 dl /dt = -100 A/s F t Forward recovery time T = 25 C 100 ns fr j I = 4 A, V = 2 V F FR Forward recovery dl /dt = 100 A/s V T = 25 C 3.5 5 V F FP j voltage 2/8 Doc ID 023262 Rev 1