Product Information

STTH8T06DI

Name: STTH8T06DI
Brand: STMicroelectronics
SKU: STTH8T06DI_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STTH8T06DI electronic component of STMicroelectronics

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Datasheet

Diodes - General Purpose, Power, Switching 600V Tandem X-Fast 8A 600V 15ns 2.05Vf

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 4.5671 ea
Line Total: USD 4.57

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 31 May to Tue. 04 Jun MOQ : 1 Multiples : 1 STTH8T06DI STMicroelectronics	1 : USD 4.915 10 : USD 1.7737 100 : USD 1.4318 500 : USD 1.1753 1000 : USD 0.9702 2000 : USD 0.936

0 - WHS 2 Ships to you between Mon. 27 May to Fri. 31 May MOQ : 1 Multiples : 1 STTH8T06DI STMicroelectronics	1 : USD 0.9515

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Additional Infomation About Product

STTH8T06 600 V tandem extra fast diode Datasheet production data Features High voltage rectifier Tandem diodes in series Very low switching losses A K Insulated device with internal ceramic Equal thermal conditions for both 300 V diodes Static and dynamic equilibrium of internal diodes are warranted by design Insulated package: A Capacitance: 7 pF K Insulated voltage: 2500 V rms TO-220AC ins STTH8T06DI Description This device is part of ST s second generation of 600 V tandem diodes. It has ultralow switching- losses with a minimized Q (6 nC) that makes it RR perfect for use in circuits working in hard- Table 1. Device summary switching mode. In particular the V /Q trade-off F RR positions this device between standard ultrafast Symbol Value diodes and silicon-carbide Schottky rectifiers in I 8 A terms of price/performance ratio. F(AV) V 600 V RRM The device offers a new positioning giving more flexibility to power-circuit designers looking for t (typ) 15 ns rr good performance while still respecting cost I (typ) 2.3 A RM constraints. V (typ) 2.05 V F Featuring ST s Turbo 2 600 V technology, the I 40 A device is particularly suited as a boost diode in FRM) continuous conduction mode power factor T (max) 175 C j correction circuits. April 2013 DocID023406 Rev 3 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH8T06 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit T from 25 to 150 C 600 j V Repetitive peak reverse voltage V RRM T = -40 C 550 j I Forward rms current 14 A F(RMS) I Average forward current, = 0.5 T = 100 C 8 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 80 A FSM p I Repetitive peak forward current T = 100 C, = 0.1 40 A FRM c T Storage temperature range -65 to +175 C stg T Operating junction temperature -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 2.8 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 10 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 30 300 j T = 25 C 2.95 j (2) V Forward voltage drop I = 8 A V F F T = 150 C 2.05 2.55 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.75 x I + 0.10 I F(AV) F (RMS) 2/9 DocID023406 Rev 3

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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