X-On Electronics has gained recognition as a prominent supplier of 1N914UR Small Signal Switching Diodes across the USA, India, Europe, Australia, and various other global locations. 1N914UR Small Signal Switching Diodes are a product manufactured by Microchip. We provide cost-effective solutions for Small Signal Switching Diodes, ensuring timely deliveries around the world.

1N914UR Microchip

1N914UR electronic component of Microchip
1N914UR Microchip
1N914UR Small Signal Switching Diodes
1N914UR  Semiconductors

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See Product Specifications
Part No. 1N914UR
Manufacturer: Microchip
Category: Small Signal Switching Diodes
Description: Small Signal Switching Diodes 100 V Signal or Computer Diode
Datasheet: 1N914UR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.4375 ea
Line Total: USD 2.44 
Availability - 847
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
847
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 2.4375
100 : USD 2.145

   
Manufacturer
Product Category
Product
Mounting Style
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Package / Case
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1N914UR from our Small Signal Switching Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N914UR and other electronic components in the Small Signal Switching Diodes category and beyond.

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1N914UR Qualified Levels: Glass MELF Switching Diode JAN, JANTX, and Available on JANTXV commercial Qualified per MIL-PRF-19500/116 version DESCRIPTION This popular 1N914UR JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. Previously listed as a CDLL914 this small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-213AA package. It may be used in a variety of very high speed applications including switchers, detectors, transient OR ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes. DO-213AA Important: For the latest information, visit our website 1N914UR MECHANICAL and PACKAGING CASE: Hermetically sealed glass case package. TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026. POLARITY: Cathode end is banded. MOUNTING: The axial coefficient of expansion (COE) of this device is approximately +6PPM/C. The COE of the mounting surface system should be selected to provide a suitable match with this device. MARKING: Part number. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 0.2 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N914 UR (e3) Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (on JANTX = JANTX level commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant Blank = Commercial grade MELF Surface Mount JEDEC type number (see Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition I Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. R Average Rectified Forward Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave I O input and a 180 degree conduction angle. t Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from rr the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. V Forward Voltage: The forward voltage the device will exhibit at a specified current (typically shown as maximum F value). V Reverse Voltage: The reverse voltage dc value, no alternating component. R Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range V RWM excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV. ELECTRICAL CHARACTERISTICS 25 C unless otherwise noted FORWARD FORWARD REVERSE FORWARD REVERSE REVERSE REVERSE REVERSE CAPACI- CAPACI- VOLTAGE VOLTAGE RECOVERY RECOVERY CURRENT CURRENT CURRENT CURRENT TANCE TANCE V V TIME TIME I 20 V I 75 V I I C C F1 F2 R1 R2 R3 R4 I =10 mA I =50 mA t t 20 V 75 V (Note 3) (Note 4) F F rr fr o o (Note 1) (Note 2) T =150 C T =150 C A A V V ns ns nA A A A pF pF 0.8 1.2 5 20 25 0.5 35 75 4.0 2.8 NOTE 1: I = I = 10 mA, R = 100 Ohms. NOTE 3: V = 0 V, f = 1 MHz, V = 50 mV (pk to pk). F R L R SIG NOTE 2: I = 50 mA. NOTE 4: V = 1.5V, f = 1 MHz, V = 50 mV (pk to pk). F R SIG T4-LDS-0279-1, Rev. 1 (121565) 2012 Microsemi Corporation Page 2 of 4

Tariff Desc

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