1SS272TE85LF Toshiba

1SS272 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS272 Unit: mm Ultra High Speed Switching Application Low forward voltage : V = 0.92V (typ.) F (3) Fast reverse recovery time : t = 1.6ns (typ.) rr Small total capacitance : C = 0.9pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V V RM 85 1. CATHODE 1 Reverse voltage V 80 V R 2. CATHODE 2 Maximum (peak) forward current I mA FM 300 * 3. ANODE 2 Average forward current I mA SMQ O 100 * 4. ANODE 1 Surge current (10ms) I A FSM 2 * JEDEC PD (Note 1, 3) 200 * JEITA SC61 Power dissipation mW P (Note 2) 150 D TOSHIBA 2 3J1S T (Note 1) 150 j Weight: 13 mg (typ.) Junction temperature C T (Note 2) 125 j T (Note 1) 55 to 150 stg Storage temperature C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 2 Note 3: Total rating, Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 1.215 mm 3 + 1.15 mm ) *: Unit rating. Total rating = Unit rating 1.5. Start of commercial production 1984-10 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS272 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit 0.61 V I = 1 mA F (1) F 0.74 Forward voltage V V I = 10 mA F (2) F 0.92 1.2 V I = 100 mA F (3) F 0.1 I V = 30 V R (1) R Reverse current A 0.5 I V = 80 V R (2) R Total capacitance 0.9 2.0 pF C V = 0 V, f = 1 MH T R z Reverse recovery time 1.6 4.0 ns t I = 10 mA, Fig.1 rr F Fig.1 Reverse recovery time (t ) test circuit rr Equivalent circuit (Top view) 2 1 3 4 Marking 2 1 A 1 3 4 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation