X-On Electronics has gained recognition as a prominent supplier of 1SS361FV,L3F Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. 1SS361FV,L3F Diodes - General Purpose, Power, Switching are a product manufactured by Toshiba. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

1SS361FV,L3F Toshiba

1SS361FV,L3F electronic component of Toshiba
1SS361FV,L3F Toshiba
1SS361FV,L3F Diodes - General Purpose, Power, Switching
1SS361FV,L3F  Semiconductors

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See Product Specifications
Part No. 1SS361FV,L3F
Manufacturer: Toshiba
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Switching diode, 80V 3 pins, VESM 0.1A
Datasheet: 1SS361FV,L3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6422 ea
Line Total: USD 0.64 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 04 Mar to Thu. 06 Mar
MOQ : 1
Multiples : 1
1 : USD 0.6422
10 : USD 0.5444
100 : USD 0.1198
500 : USD 0.0758
1000 : USD 0.0526
2500 : USD 0.0403
8000 : USD 0.0342
24000 : USD 0.0318
48000 : USD 0.0281

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 1SS361FV,L3F from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS361FV,L3F and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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1SS294 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS294 Unit: mm Low Voltage High Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage : V = 0.54V (typ.) F (3) Low reverse surrent : I = 5A (max) R Small package : SC59 Note1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 45 V RM Reverse voltage V 40 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O JEDEC TO236MOD Power dissipation P 150 mW JEITA SC59 TOSHIBA 2-3F1S Junction temperature T 125 C j Weight: 12 mg (typ.) Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 1mA 0.28 F (1) F Forward voltage V I = 10mA 0.36 V F (2) F V I = 100mA 0.54 0.60 F (3) F Reverse current I V = 40V 5 A R R Total capacitance C V = 0 V, f = 1MHz 18 25 pF T R Marking Start of commercial production 1986-03 1 2017-10-19 1SS294 2 2017-10-19

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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