1SS427,L3M Toshiba

1SS427 Switching Diodes Silicon Epitaxial Planar 1SS4271SS4271SS4271SS427 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Ultra-High-Speed Switching 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 2. 2. Packaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode SOD-923 1: Cathode 2: Anode fSC Start of commercial production 2005-12 2014-07-08 1 Rev.3.01SS427 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 85 V RM Reverse voltage V 80 R Peak forward current I 200 mA FM Average rectified current I 100 O Power dissipation P (Note 1) 150 mW D Non-repetitive peak forward surge current I (Note 2) 1 A FSM Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a glass epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. Note 2: Measured with a 10 ms pulse. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V I = 1 mA 0.62 V F(1) F V I = 10 mA 0.75 F(2) F V I = 100 mA 0.98 1.20 F(3) F Reverse current I V = 30 V 0.1 A R(1) R I V = 80 V 0.5 R(2) R Total capacitance C V = 0 V, f = 1 MHz 0.3 pF t R Reverse recovery time t I = 10 mA 1.6 ns rr F See Fig. 5.1. Fig. Fig. Fig. Fig. 4.14.14.14.1 Reverse recovery time (tReverse recovery time (tReverse recovery time (tReverse recovery time (trrrrrrrr) Test circuit) Test circuit) Test circuit) Test circuit 2014-07-08 2 Rev.3.0