1SV229TPH3F Toshiba

1SV229 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV229 VCO for UHF Band Radio Unit: mm Ultra low series resistance: r = 0.2 (typ.) s Useful for small size set Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 15 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEDEC Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling JEITA Precautions/Derating Concept and Methods) and individual TOSHIBA 1-1E1A reliability data (i.e. reliability test report and estimated failure rate, etc). Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 15 V R R Reverse current I V = 15 V 3 nA R R Capacitance C V = 2 V, f = 1 MHz 14 15 16 pF 2V R Capacitance C V = 10 V, f = 1 MHz 5.5 6 6.5 pF 10V R Capacitance ratio C / C 2.0 2.5 2V 10V Series resistance r V = 5 V, f = 470 MHz 0.2 0.4 s R Marking Start of commercial production 1988-06 1 2014-03-01 1SV229 C (Ta) C (25) Note: = 100 (%) C C (25) 2 2014-03-01 CAPACITANCE CHANGE RATIO (%) (Note) C