1SV277TPH3F Toshiba

1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm High capacitance ratio: C / C = 2.3 (typ.) 1V 4V Low series resistance: r = 0.42 (typ.) s Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 10 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 1-1E1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 0.004 g (typ.) etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 10 V R R Reverse current I V = 10 V 3 nA R R Capacitance C V = 1 V, f = 1 MHz 4.0 4.5 4.9 pF 1V R Capacitance C V = 4 V, f = 1 MHz 1.85 2.0 2.35 pF 4V R Capacitance ratio C / C 2.0 2.3 1V 4V Series resistance r V = 1 V, f = 470 MHz 0.42 0.55 s R Marking Start of commercial production 1994-03 1 2014-03-01 1SV277 C (Ta) C (25) Note: = 100 (%) C C (25) 2 2014-03-01 (Note)