1SV282(TPH2,F) Toshiba

1SV282 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 CATV Tuning Unit: mm High capacitance ratio: C /C = 12.5 (typ.) 2 V 25 V Low series resistance: r = 0.6 (typ.) s Excellent C-V characteristics, and small tracking error. Useful for small size tuner. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 34 V R Peak reverse voltage V 36 (R = 10 k ) V RM L Junction temperature T 125 C j Storage temperature range T -55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 1-1G1A Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.0014 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse voltage V I = 1 A 34 V R R Reverse current I V = 32 V 10 nA R R Capacitance(Note 1) C V = 2 V, f = 1 MHz 33 35.5 38 2 V R pF Capacitance(Note 1) C V = 25 V, f = 1 MHz 2.6 2.85 3.0 25 V R Capacitance ratio C /C 12.0 12.5 2 V 25 V Capacitance ratio C /C 1.03 25 V 28 V Series resistance r V = 5 V, f = 470 MHz 0.6 0.8 s R Note 1: Available in matched group for capacitance to 2%. For devices with the ordering number 1SV282(TPH2,F). C (max) C (min) < 0.02 = C (min) (VR = 2 to 25 V) Marking Start of commercial production 1998-08 1 2016-12-13 1SV282 C (Ta) C (25) Note: = 100 (%) C C (25) 2 2016-12-13