1SV282(TPH3,F) Toshiba

1SV282 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV282 CATV Tuning Unit: mm High capacitance ratio: C /C = 12.5 (typ.) 2 V 25 V Low series resistance: r = 0.6 (typ.) s Excellent C-V characteristics, and small tracking error. Useful for small size tuner. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 34 V R Peak reverse voltage V 36 (R = 10 k)V RM L Junction temperature T 125 C j Storage temperature range T 55~125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 1-1G1A Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.0014 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 34 V R R Reverse current I V = 32 V 10 nA R R Capacitance C V = 2 V, f = 1 MHz 33 35.5 38 pF 2 V R Capacitance C V = 25 V, f = 1 MHz 2.6 2.85 3.0 pF 25 V R Capacitance ratio C /C 12.0 12.5 2 V 25 V Capacitance ratio C /C 1.03 25 V 28 V Series resistance r V = 5 V, f = 470 MHz 0.6 0.8 s R Note 1: Available in matched group for capacitance to 2%. C (max) C (min) < 0.02 = C (min) (V = 2~25 V) R Marking 1 2007-11-01 1SV282 C (Ta) C (25) Note 2: = 100 (%) C C (25) 2 2007-11-01 (Note 2)