X-On Electronics has gained recognition as a prominent supplier of 1SV305,H3F Varactor Diodes across the USA, India, Europe, Australia, and various other global locations. 1SV305,H3F Varactor Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for Varactor Diodes, ensuring timely deliveries around the world.

1SV305,H3F Toshiba

1SV305,H3F electronic component of Toshiba
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See Product Specifications
Part No. 1SV305,H3F
Manufacturer: Toshiba
Category: Varactor Diodes
Description: Varactor Diodes Variable Cap Diode 10V 19.3pF 0.27
Datasheet: 1SV305,H3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.0891 ea
Line Total: USD 356.4 
Availability - 0
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0
Ship by Mon. 28 Apr to Wed. 30 Apr
MOQ : 4000
Multiples : 4000
4000 : USD 0.0891
8000 : USD 0.0726
24000 : USD 0.0715
48000 : USD 0.0682

   
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We are delighted to provide the 1SV305,H3F from our Varactor Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SV305,H3F and other electronic components in the Varactor Diodes category and beyond.

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1SV305 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV305 VCO for VHF Band Radio Unit: mm Small package High capacitance ratio: C / C = 3.0 (typ.) 1V 4V Low series resistance: r = 0.27 (typ.) s Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 10 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 1-1G1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 0.0014 g (typ.) etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 10 V R R Reverse current I V = 10 V 3 nA R R Capacitance C V = 1 V, f = 1 MHz 17.3 18.3 19.3 pF 1V R Capacitance C V = 4 V, f = 1 MHz 5.3 6.1 6.6 pF 4V R Capacitance ratio C / C 2.8 3 1V 4V Series resistance r V = 1 V, f = 470 MHz 0.27 0.32 s R Marking Start of commercial production 1997-03 1 2014-03-01 1SV305 C (Ta) C (25) Note: = 100 (%) C C (25) 2 2014-03-01 (Note)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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