1SV325,H3F Toshiba

1SV325 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV325 TCXO/VCO Unit: mm High capacitance ratio: C / C = 4.3 (typ.) 1V 4V Low series resistance: r = 0.4 (typ.) s Useful for small size tuner. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 10 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 1-1G1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 0.0014 g (typ.) etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 10 V R R Reverse current I V = 10 V 3 nA R R Capacitance C V = 1 V, f = 1 MHz 44 49.5 pF 1V R Capacitance C V = 4 V, f = 1 MHz 9.2 12 pF 4V R Capacitance ratio C / C 4 4.3 1V 4V Series resistance r V = 4 V, f = 100 MHz 0.4 0.8 s R Note: Signal level when capacitance is measured: V = 500 mVfms sig Marking Start of commercial production 1999-03 1 2014-03-01 1SV325 2 2014-03-01