20DL2C41A,20FL2C41A,20GL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 20DL2C41A,20FL2C41A,20GL2C41A Unit: mm Switching Mode Power Supply Applications Converter & Chopper Applications z Repetitive Peak Reverse Voltage: V = 200 V, 300 V, 400 V RRM z Average Output Rectified Current: I = 20 A O z Ultra Fast Reverse-Recovery Time: t = 35 ns (Max) rr z Low Switching Losses and Output Noise Absolute Maximum Ratings (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT 20DL2C41A 200 Repetitive Peak V V 20FL2C41A 300 RRM Reverse Voltage 20GL2C41A 400 Average Output Rectified Current I 20 A O 100 (50 H ) z Peak One Cycle Surge Forward I A FSM Current (Non Repetitive) 110 (60 H ) z Junction Temperature T 40 to 150 C j JEDEC Storage Temperature Range T 40 to 150 C JEITA stg TOSHIBA 12-16D1A Screw Torque 0.8 Nm Weight: 4.85 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Polarity Marking Abbreviation Code Part No. 20DL2C 20DL2C41A 20FL2C 20FL2C41A 20DL2C Part No. (or abbreviation code) 20GL2C 20GL2C41A Lot No. Note: A line under a Lot No. identifies the indication of product Labels. Note G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to Characteristics environmental matters such as the RoHS compatibility of Product. indicator The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 1 2008-12-27 20DL2C41A,20FL2C41A,20GL2C41A Electrical Characteristics (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION TYP. MAX UNIT 20DL2C41A 0.98 Peak Forward Voltage V I = 10 A V 20FL2C41A 1.3 FM FM (Note 1) 20GL2C41A 1.8 Repetitive Peak Reverse I V = Rated 50 A RRM RRM Current (Note 1) Reverse Recovery Time (Note 1) t I = 2.0 A, di / dt = 50 A / s 35 ns rr F Forward Recovery Time (Note 1) t I = 1 A 100 ns fr F Thermal Resistance R Total DC, Junction to Case 1.5 C / W th (jc) Note 1: A value applied to one cell. Note 2: trr Test Circuit trr Waveform Note 3: t Test Circuit t Waveform fr fr Handling Precaution The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even for a moment. Do not exceed any of these ratings. The following are the general derating methods that we recommend when you design a circuit with a device. V : We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the RRM absolute maximum rating of V for a DC circuit and be no greater than 50% of that of V for RRM RRM an AC circuit. V has a temperature coefficient of 0.1%/C. Take this temperature coefficient into RRM account designing a device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating O of I . Carry out adequate heat design. If you cant design a circuit with excellent heat radiation, set O the margin by using an allowable Tc max-I curve. O This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180. Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. We recommend that a device be used at a Tj of below 120C under the worst load and heat radiation conditions. Please refer to the Rectifiers databook for further information. 2 2008-12-27