X-On Electronics has gained recognition as a prominent supplier of 2SA1020-Y(TE6,F,M) Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2SA1020-Y(TE6,F,M) Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

2SA1020-Y(TE6,F,M) Toshiba

2SA1020-Y(TE6,F,M) electronic component of Toshiba
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See Product Specifications
Part No.2SA1020-Y(TE6,F,M)
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP -50V -2A 900mW
Datasheet: 2SA1020-Y(TE6,F,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.2533
10 : USD 1.0584
30 : USD 0.9623
100 : USD 0.8661
500 : USD 0.8094
1000 : USD 0.7554
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.1182
9000 : USD 0.1182
24000 : USD 0.1182
45000 : USD 0.117
99000 : USD 0.1127
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Maximum Operating Temperature
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2SA1020-Y(TE6,F,M) from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SA1020-Y(TE6,F,M) and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mm Power Switching Applications Low Collector saturation voltage: V = 0.5 V (max) (I = 1 A) CE (sat) C High collector power dissipation: P = 900 mW C High-speed switching: t = 1.0 s (typ.) stg Complementary to 2SC2655 Absolute Maximum Ratings (T = 25C) a Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 2 A C Base current I 0.2 A B JEDEC TO-92MOD Collector power dissipation P 900 mW C JEITA Junction temperature T 150 C j Storage temperature range T 55 to 150 C TOSHIBA 2-5J1A stg Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling PrecautionsDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-11-09 2SA1020 Electrical Characteristics (T = 25C) a Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 50 V, I = 0 1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 1 A EBO EB C Collector-emitter breakdown voltage V I = 10 mA, I = 0 50 V (BR) CEO C B h V = 2 V, I = 0.5 A 70 240 FE (1) CE C DC current gain h V = 2 V, I = 1.5 A 40 FE (2) CE C Collector-emitter saturation voltage V I = 1 A, I = 0.05 A 0.5 V CE (sat) C B Base-emitter saturation voltage V I = 1 A, I = 0.05 A 1.2 V BE (sat) C B Transition frequency f V = 2 V, I = 0.5 A 100 MHz T CE C Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 40 pF ob CB E Turn-on time t Output 0.1 on I B2 Input 20 s I B2 I B1 Switching time Storage time t 1 s stg V = 30 V CC I = 0.05 A , I = 0.05 A B1 B2 Fall time t 0.1 f DUTY CYCLE 1% Note: h classification O: 70 to 140, Y: 120 to 240 FE (1) Marking A1020 Part No. (or abbreviation code) Lot No. Note 2 Characteristics indicator Note 2: A line under a Lot No. identifies the indication of product Labels. Not underlined: Pb /INCLUDES > MCV Underlined: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2010-11-09 I B1 30

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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