1SV262TPH3F Toshiba

1SV262 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV262 CATV Tuning Unit: mm High capacitance ratio: C2 V/C25 V = 12.5 (typ.) Low series resistance: rs = 0.6 (typ.) Excellent C-V characteristics, and small tracking error. Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 34 V R Peak reverse voltage V 36 (R = 10 k)V RM L Junction temperature T 125 C j Storage temperature range T 55~125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. JEITA operating temperature/current/voltage, etc.) are within the absolute maximum ratings. TOSHIBA 1-1E1A Please design the appropriate reliability upon reviewing the Weight: 0.004 g (typ.) Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 34 V R R Reverse current I V = 32 V 10 nA R R Capacitance C2 V V = 2 V, f = 1 MHz 33 35.5 38 pF R Capacitance C25 V V = 25 V, f = 1 MHz 2.6 2.85 3.0 pF R Capacitance ratio C2 V/C25 V 12.0 12.5 Capacitance ratio C25 V/C28 V 1.03 Series resistance r V = 5 V, f = 470 MHz 0.6 0.8 s R Note 1: Available in matched group for capacitance to 2.0%. C (max) C (min) < 0.02 (V = 2~25 V) = R C (min) Marking 1 2007-11-01 1SV262 C (Ta) C (25) Note 2: = 100 (%) C C (25) 2 2007-11-01 (Note 2)