1SV271TPH3F Toshiba

1SV271 TOSHIBA Diode Silicon Epitaxial Pin Type 1SV271 VHF to UHF Band RF Attenuator Applications Unit: mm Useful for small size tuner Small total capacitance: C = 0.25 pF (typ.) T Low series resistance: r = 3 (typ.) s Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 50 V R Forward current I 50 mA F Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 1-1E1A Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.004 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 10 A 50 V R R Reverse current I V = 50 V 0.1 A R R Forward voltage V I = 50 mA 0.93 1.0 V F F Total capacitance C V = 50 V, f = 1 MHz 0.25 0.4 pF T R Series resistance r I = 10 mA, f = 100 MHz 3 s F Marking Start of commercial production 1993-06 1 2014-03-01 1SV271 2 2014-03-01