GA01PNS80-220 Silicon Carbide PiN Diode V = 8.0 kV RRM I = 2 A F (Tc=25C) Features Package RoHS Compliant 8 kV blocking 175 C operating temperature Fast turn off characteristics Soft reverse recovery characteristics PIN 1 2 Ultra-Fast high temperature switching 1 PIN 2 Advantages Applications Reduced stacking Voltage Multiplier Reduced system complexity/Increased reliability Ignition/Trigger Circuits Oil/Downhole Lighting Defense Maximum Ratings at T = 175 C, unless otherwise specified j Parameter Symbol Conditions Values Unit Repetitive peak reverse voltage V 8 kV RRM Continuous forward current I 2 A F RMS forward current I 1 A F(RMS) Operating and storage temperature T , T -55 to 175 C j stg Electrical Characteristics at T = 175 C, unless otherwise specified j Values Parameter Symbol Conditions Unit min. typ. max. I = 2 A, T = 25 C 6.1 F j Diode forward voltage V V F I = 2 A, T = 175 C 4.7 F j V = 8 kV, T = 25 C 4 R j Reverse current I A R V = 8 kV, T = 175 C R j 4 V = 1000 V R Total reverse recovery charge Q I I 558 nC rr F F,MAX I = 1.5 A F dI /dt = 70 A/s F V = 1000 V R T = 175 C Switching time ts j < 236 ns I = 1.5 A F V = 1 V, f = 1 MHz, T = 25 C R j 26 V = 400 V, f = 1 MHz, T = 25 C Total capacitance C R j 5 pF V = 1000 V, f = 1 MHz, T = 25 C 4 R j Total capacitive charge Q V = 1000 V, f = 1 MHz, T = 25 C 5.4 nC C R j Apr 2015 Latest version at: GA01PNS80-220 Figure 1: Typical Forward Characteristics Figure 2: Typical Reverse Characteristics at 25C Figure 3: Typical Junction Capacitance vs Reverse Voltage Figure 4: Typical Turn Off Characteristics at I = 0.5 A and k Characteristics V = 1000 V R Figure 5: Typical Turn Off Characteristics at T = 175C and j Figure 6: Reverse Recovery Charge vs Cathode Current V = 1000 V R Apr 2015 Latest version at: