1SV239TPH3F Toshiba

1SV239 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV239 VCO for UHF Radio Unit: mm Ultra low series resistance: r = 0.44 (typ.) s Useful for small size set Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 15 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEDEC Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling JEITA Precautions/Derating Concept and Methods) and individual TOSHIBA 1-1E1A reliability data (i.e. reliability test report and estimated failure rate, etc). Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 15 V R R Reverse current I V = 15 V 3 nA R R Capacitance C V = 2 V, f = 1 MHz 3.8 4.25 4.7 pF 2V R Capacitance C V = 10 V, f = 1 MHz 1.5 1.75 2.0 pF 10V R Capacitance ratio C / C 2.0 2.4 2V 10V Series resistance r V = 1 V, f = 470 MHz 0.44 0.6 s R Marking Start of commercial production 1989-05 1 2014-03-01 1SV239 C (Ta) C (25) Note: = 100 (%) C C (25) 2 2014-03-01 (Note)