1SS397TE85LF Toshiba

1SS397 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS397 High Voltage, High Speed Switching Applications Unit: mm Small package : SC-70 Low forward voltage : V = 1.0 V (typ.) F High voltage : V = 400 V (min) R Fast reverse recovery time : t = 0.5 s (typ.) rr Small total capacitance : C = 2.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 420 V RM Reverse voltage V 400 V R Maximum (peak) forward current I 300 mA FM Average forward current IO 100 mA Surge current (10ms) I 2 A FSM P (Note 1, 3) 200 mW D Power dissipation JEDEC P (Note 2) 100 D JEITA SC-70 Tj (Note 1) 150 TOSHIBA 1-2P1D Junction temperature C T (Note 2) 125 j Weight: 0.006g (typ.) T (Note 1) 55 to 150 stg Storage temperature range C T (Note 2) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: For devices with the ordering part number ending in LF(T. Note 2: For devices with the ordering part number in other than LF(T. 2 Note 3: Mounted on a FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu pad: 0.5 mm 3) Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.8 F (1) F Forward voltage V V I = 100 mA 1.0 1.3 F (2) F V = 300 V 0.1 IR (1) R Reverse current A I V = 400 V 1.0 R (2) R Total capacitance C V = 0 V, f = 1 MH 2.5 5.0 pF T R z Reverse recovery time t I = 10 mA (Fig.1) 0.5 s rr F Start of commercial production 1995-10 2020-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS397 Fig.1 Reverse Recovery Time (t ) Test Circuit rr Equivalent Circuit (Top View) Marking 2020-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation