1SS402TE85LF Toshiba

1SS402 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS402 Unit: mm High Speed Switching Applications z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. z Low forward voltage : V = 0.50V (typ.) F (3) z Low reverse current : I = 0.5A (max) R z Small total capacitance : C = 3.9pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 25 V RM Reverse voltage V 20 V R Maximum (peak) forward current I 100 * mA FM Average forward current I 50 * mA O Surge Current (10ms) I 1 * A FSM JEDEC Power dissipation P 100 * mW JEITA 1-2U1A TOSHIBA Junction temperature T 125 C j Weight: 0.006 g(typ.) Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = Unit rating 1.5 Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.33 F (1) F Forward voltage V V I = 5mA 0.38 F (2) F V I = 50mA 0.50 0.55 F (3) F Reverse current I V = 20V 0.5 A R (1) R Total capacitance C V = 0, f = 1MHz 3.9 5.0 pF T R Pin Assignment (Top View) Marking A7 Start of commercial production 1999-02 1 2014-03-01 1SS402 2 2014-03-01