X-On Electronics has gained recognition as a prominent supplier of 1SS405,H3F Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. 1SS405,H3F Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

1SS405,H3F Toshiba

1SS405,H3F electronic component of Toshiba
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See Product Specifications
Part No.1SS405,H3F
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Toshiba Schottky Diodes & Rectifiers Small-Signal Schotky 0.05A Io Vr 20V
Datasheet: 1SS405,H3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4000: USD 0.0302 ea
Line Total: USD 120.8 
Availability - 0
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.066
8000 : USD 0.0659
12000 : USD 0.0658
20000 : USD 0.0656
24000 : USD 0.0654
40000 : USD 0.0653
100000 : USD 0.0651
200000 : USD 0.065
500000 : USD 0.0648

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6136
10 : USD 0.5049
100 : USD 0.1143
500 : USD 0.0725
1000 : USD 0.0455
4000 : USD 0.0445

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 78
Multiples : 1
78 : USD 0.4513

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 4000
Multiples : 4000
4000 : USD 0.0302
8000 : USD 0.0249
24000 : USD 0.0244

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Vr - Reverse Voltage
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We are delighted to provide the 1SS405,H3F from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1SS405,H3F and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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1SS405 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS405 Unit: mm High Speed Switching Application z Low forward voltage : V = 0.50V (typ.) F (3) z Low reverse current : I = 0.5A (max) R z Small total capacitance : C = 3.9pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage V 25 V RM Reverse voltage V 20 V R Maximum (peak) forward current I 100 mA FM Average forward current I 50 mA O Surge current (10ms) I 1 A FSM Power dissipation P * 150 mW JEDEC Junction temperature T 125 C j JEITA Storage temperature range T 55 to 125 C stg TOSHIBA 1-1G1A Weight: 1.4mg(Typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 20 mm, pad dimension of 4 4 mm. Electrical Characteristics (Ta = 25C) Test Characteristic Symbol Test Condition Min Typ. Max Unit Circuit V I = 1mA 0.33 F (1) F Forward voltage V I = 5mA 0.38 F (2) F V V I = 50mA 0.50 0.55 F (3) F Reverse current I V = 20V 0.5 R R A Total capacitance C V = 0, f = 1MH 3.9 T R z pF Equivalent Circuit (Top View) Marking A7 Start of commercial production 2001-09 2014-03-01 11SS405 2014-03-01 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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