1SS416CT,L3F Toshiba

1SS416CT TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416CT Unit: mm High Speed Switching Application 0.60.05 z Small package z Low forward voltage: V = 0.23 V (typ.) I = 5 mA F F Absolute Maximum Ratings (Ta = 25C) 0.50.03 +0.02 Characteristics Symbol Rating Unit 0.050.03 0.38 -0.03 Maximum (peak) reverse Voltage V 35 V RM Reverse voltage V 30 V R Maximum (peak) forward current I 200 mA FM Average forward current I 100 mA O Surge current (10ms) I 1 A FSM Power dissipation P * 100 mW CST2 Junction temperature T 125 C j JEDEC Storage temperature range T 55 to 125 C stg JEITA Operating temperature range T 40 to 100 C opr TOSHIBA 1-1P1A Weight: 0.7 mg (typ.) *: Mounted on a glass epoxy circuit board of 20 mm 20 mm, pad dimension of 4 mm 4 mm. Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Test Characteristics Symbol Test Condition Min Typ. Max Unit Circuit V I = 1 mA 0.18 F (1) F Forward voltage V V I = 5 mA 0.23 F (2) F V I = 100 mA 0.38 0.50 F (3) F I V = 10 V 20 R(1) R Reverse current A I V = 30 V 50 R(2) R Total capacitance C V = 0 V, f = 1 MHz 15 pF T R Start of commercial production 2005-03 1 2014-03-01 CATHODE MARK 1.00.05 0.250.03 0.250.03 0.65 0.050.031SS416CT Marking Equivalent Circuit (top view) W 2 2014-03-01