V 900 V DS I 25C 11.5 A D E4D20120A R 280 m DS(on) Silicon Carbide Schottky Diode E-Series Automotive Features Package 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits TO-220-2 Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency PIN 1 Reduction of Heat Sink Requirements CASE Parallel Devices Without Thermal Runaway PIN 2 Ideal for Outdoor Environments Applications Boost diodes in PFC or DC/DC stages Part Number Package Marking Free Wheeling Diodes in Inverter stages AC/DC converters E4D20120A TO-220-2 E4D20120 Automotive and Traction Power Conversion PV Inverters Maximum Ratings (T = 25 C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note V Repetitive Peak Reverse Voltage 1200 V RRM V DC Peak Reverse Voltage 1200 V R 54.5 T =25C C I Continuous Forward Current 26 A T =135C Fig. 3 F C 20 T =150C C 250 T =25C C P Power Dissipation W Fig. 4 tot 112.5 T =110C C 91 T =25C, t =10 ms, Half Sine Pulse C P I Repetitive Peak Forward Surge Current A FRM 61 T =110C, t =10 ms, Half Sine Pulse C P dV/dt Diode dV/dt ruggedness 250 V/ns V =0-960V R 84.5 T =25C, t =10 ms 2 2 2 C P i dt i t value A s 60.5 T =110C, t =10 ms C P -55 to T , T Operating Junction and Storage Temperature C J stg +175 1 Nm M3 Screw TO-220 Mounting Torque 8.8 lbf-in 6-32 Screw 1 E4D20120A Rev. -, 07-2018Electrical Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note 1.5 1.8 I = 20 A T =25C F J V Forward Voltage V Fig. 1 F 2.2 I = 20 A T =175C F J 35 200 V = 1200 V T =25C R J I Reverse Current A Fig. 2 R 65 V = 1200 V T =175C R J V = 800 V, I = 20A R F Q Total Capacitive Charge 99 nC di/dt = 200 A/s Fig. 5 C T = 25C J 1500 V = 0 V, T = 25C, f = 1 MHz R J C Total Capacitance 93 pF V = 400 V, T = 25C, f = 1 MHz Fig. 6 R J 67 V = 800 V, T = 25C, f = 1 MHz R J E Capacitance Stored Energy 28 J V = 800 V Fig. 7 C R Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note R Thermal Resistance from Junction to Case 0.6 C/W Fig. 9 JC Typical Performance 40 1,000 T = -55 C J 900 35 T = 25 C J 800 T = 75 C 30 J 700 T = 125 C J 25 T = 175 C 600 J 20 500 T = 175 C J 400 1515 TT == 12125 5 CC J 300 T = 75 C J 10 T = 25 C J 200 T = -55 C 5 J 100 0 0 0 12 34 0 500 1000 1500 Foward Voltage, V (V) F Reverse Voltage, V (V) V (V) V (V) R F R Figure 1. Forward Characteristics Figure 2. Reverse Characteristics 2 E4D20120A Rev. -, 07-2018 FFoowwaarrdd CCuurrrreennt,t, II (A) F I (A) F RReevveerrssee LLeeaakkaaggee CCuurrrreenntt,, II (uA) I (A) RR R