VSKY10201406-G4-08 Vishay

33 3 VSKY10201406 www.vishay.com Vishay Semiconductors Schottky Rectifier Surface-Mount Flipky Gen 2 FEATURES Schottky diode for high-speed switching Very low dimensions: 1.4 mm x 0.6 mm x 0.29 mm 1 A forward current Low forward voltage drop (typ. 425 mV at 1 A) Low reverse current (< 20 A at 10 V) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS AVAILABLE 3D Models Models Related Footprints Documents PARTS TABLE TAPED UNITS MINIMUM CIRCUIT PACKAGE TYPE PER REEL PART ORDERING CODE WEIGHT ORDER CONFIGURATION NAME CODE (8 mm TAPE ON QUANTITY 7 REEL) VSKY10201406VSKY10201406-G4-08 Single CLP1406-2L 52 0.570 mg 5000 5000 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Maximum repetitive reverse voltage V 20 V RRM Maximum average forward rectified current I 1A F(AV) Surge forward current 8.3 ms half sine-wave I 18 A FSM Power dissipation Footprint acc. fig. 4 P 450 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Acc. JEDEC 51-3 Thermal resistance junction to ambient air R 280 K/W thJA footprint acc. fig. 4 Maximum operating junction temperature T 150 C j Storage temperature range T -65 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT V = 10 V I 20 A R R Leakage current V = 20 V I 100 A R R I = 0.5 A V 0.375 0.400 V F F Forward voltage I = 1 A V 0.425 0.450 V F F Diode capacitance V = 0 V, f = 1 MHz C 240 pF R D Rev. 1.3, 27-Feb-2019 Document Number: 85931 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DD D MM XX YY0.54 VSKY10201406 www.vishay.com Vishay Semiconductors RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A Axis Title Axis Title 1000 10000 250 10000 f = 1 MHz T = 150 C J 125 C 200 100 100 C 1000 1000 25 C 150 50 C 10 75 C 100 100 100 1 50 0.1 10 0 10 0 0.1 0.2 0.3 0.4 0.5 010 20 22865 V (V) 22867 V (V) F R 2nd line 2nd line Fig. 1 - Typical Forward Current vs. Forward Voltage Fig. 3 - Typical Capacitance vs. Reverse Voltage Axis Title Axis Title 100 000 10000 1000 10000 T = 150 C J 10 000 125 C 1000 100 1000 100 C 1000 Footprint (in mm) 75 C 1.33 100 100 10 100 50 C 10 25 C 0.31 0.185 1 10 1 10 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 22866 V (V) t - Pulse Width (s) 22868 R p 2nd line 2nd line Fig. 2 - Typical Reverse Leakage Current vs. Reverse Voltage Fig. 4 - Typical Thermal Impedance Rev. 1.3, 27-Feb-2019 Document Number: 85931 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2nd line 2nd line I (A) I (mA) R F 1st line 1st line 2nd line 2nd line 2nd line 2nd line Z - Thermal Impedance (K/W) C (pF) D th 1st line 1st line 2nd line 2nd line