X-On Electronics has gained recognition as a prominent supplier of VSLY5850 Infrared Emitters - High Power across the USA, India, Europe, Australia, and various other global locations. VSLY5850 Infrared Emitters - High Power are a product manufactured by Vishay. We provide cost-effective solutions for Infrared Emitters - High Power, ensuring timely deliveries around the world.

VSLY5850 Vishay

VSLY5850 electronic component of Vishay
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Part No.VSLY5850
Manufacturer: Vishay
Category: Infrared Emitters - High Power
Description: Infrared Emitters - High Power 850nm,T-1.75 600mW/sr,+/-3deg.
Datasheet: VSLY5850 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.414 ea
Line Total: USD 1.41 
Availability - 1196
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 1.753
10 : USD 1.4668
30 : USD 1.3107
100 : USD 1.1339
500 : USD 1.0569
1000 : USD 1.0198

1691
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.5701
10 : USD 1.0481
100 : USD 0.8106
500 : USD 0.7435
1000 : USD 0.6925
4000 : USD 0.6549
12000 : USD 0.6442

1196
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 1.414
10 : USD 0.9856
28 : USD 0.6174
76 : USD 0.5838

90
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 55
Multiples : 1
55 : USD 0.9119

3841
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 127
Multiples : 1
127 : USD 1.1196

250
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 13
Multiples : 1
13 : USD 1.0068

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
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Radiant Intensity
Beam Angle
If - Forward Current
Vf - Forward Voltage
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Illumination Color
Brand
Lens Shape
Cnhts
Fall Time
Hts Code
Mxhts
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We are delighted to provide the VSLY5850 from our Infrared Emitters - High Power category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VSLY5850 and other electronic components in the Infrared Emitters - High Power category and beyond.

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VSLY5850 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: leaded Package form: T-1 Dimensions (in mm): 5 Leads with stand-off Peak wavelength: = 850 nm p High reliability High radiant power High radiant intensity 22114 Narrow angle of half intensity: = 3 Suitable for high pulse current operation Good spectral matching with CMOS cameras DESCRIPTION Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TM As part of the SurfLight portfolio, the VSLY5850 is an infrared, 850 nm emitting diode based on GaAlAs surface APPLICATIONS emitter chip technology with extreme high radiant intensity, Infrared radiation source for operation with CMOS high optical power and high speed, molded in a clear, cameras untinted plastic package, with a parabolic lens. High speed IR data transmission Smoke-automatic fire detectors IR Flash PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSLY5850 600 3 850 10 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSLY5850 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 190 mW V Junction temperature T 100 C j Operating temperature range T - 40 to + 85 C amb Storage temperature range T - 40 to + 100 C stg Soldering temperature t 5 s, 2 mm from case T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 230 K/W thJA Rev. 1.1, 28-Mar-13 Document Number: 83160 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSLY5850 www.vishay.com Vishay Semiconductors 200 120 180 100 160 140 80 120 R = 230 K/W thJA R = 230 K/W thJA 100 60 80 40 60 40 20 20 0 0 0 1020 3040506070 8090 100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 22116 22115 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.65 1.9 V F p F Forward voltage I = 1 A, t = 100 s V 2.9 V F p F I = 1 mA TK - 1.45 mV/K F VF Temperature coefficient of V F I = 10 mA TK - 1.25 mV/K F VF Reverse current I not designed for reverse operation A R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 125 pF R j I = 100 mA, t = 20 ms I 300 600 900 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 5100 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 55 mW F p e Temperature coefficient of I = 100 mA TK - 0.35 %/K e F e Angle of half intensity 3 deg Peak wavelength I = 100 mA 840 850 870 nm F p Spectral bandwidth I = 100 mA 30 nm F Temperature coefficient of I = 100 mA TK 0.25 nm/K p F p Rise time I = 100 mA t 10 ns F r Fall time I = 100 mA t 10 ns F f Rev. 1.1, 28-Mar-13 Document Number: 83160 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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