VSMB14940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW FEATURES Package type: surface mount Package form: side view Dimensions (L x W x H in mm): 3.2 x 2.51 x 1.2 Peak wavelength: = 940 nm p High reliability High radiant power Very high radiant intensity Angle of half intensity: = 9 Suitable for high pulse current operation DESCRIPTION Floor life: 168 h, MSL 3, according to J-STD-020 VSMB14940 is an infrared, 940 nm, side looking emitting Material categorization: for definitions of compliance diode in GaAlAs multi quantum well (MQW) technology please see www.vishay.com/doc 99912 with high radiant power and high speed, molded in clear, untinted PCB based package (with lens) for surface mounting (SMD). APPLICATIONS Emitter for remote control IR touch panels Photointerrupters Optical switch PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSMB14940 35 9 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB14940 Tape and reel MOQ: 1500 pcs, 1500 pcs/reel Side view Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 70 mA F Surge forward current t = 100 s I 500 mA p FSM Power dissipation P 112 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature According fig. 10, J-STD-020 T 260 C sd Thermal resistance junction / ambient J-STD-051, soldered on PCB R 580 K/W thJA Rev. 1.2, 19-Nov-15 Document Number: 84210 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMB14940 www.vishay.com Vishay Semiconductors 120 80 70 100 60 80 50 60 40 30 40 R = 580 K/W R = 580 K/W thJA thJA 20 20 10 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 20 mA, t = 20 ms V 1.05 1.24 1.5 V F p F Forward voltage I = 70 mA, t = 20 ms V - 1.33 1.6 V F p F I = 500 mA, t = 100 s V -1.8 - V F p F Temperature coefficient of V I = 20 mA TK - -1.12 - mV/K F F VF Reverse current V = 5 V I - - 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -38- pF R J I = 20 mA, t = 20 ms I 6.5 10.5 14.5 mW/sr F p e Radiant intensity I = 70 mA, t = 20 ms I -35- mW/sr F p e I = 500 mA, t = 100 s I -205 - mW/sr F p e Radiant power I = 70 mA, t = 20 ms -28- mW F p e Temperature coefficient of radiant I = 20 mA TK - 0.39 - %/K F e power Angle of half intensity - 9- deg Peak wavelength I = 70 mA 920 940 960 nm F p Spectral bandwidth I = 30 mA -30- nm F Temperature coefficient of I = 30 mA TK -0.30- nm/K p F p Rise time I = 100 mA, 20 % to 80 % t -15- ns F r Fall time I = 100 mA, 20 % to 80 % t -15- ns F f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 1000 1.34 I = 20 mA F t = 100 s p 1.32 1.30 100 1.28 1.26 1.24 10 1.22 1.20 1 1.18 1.0 1.2 1.4 1.6 1.8 2.0 -60 -40 -20 0 20 40 60 80 100 T - Ambient Temperature (C) V - Forward Voltage (V) amb F Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Forward Voltage vs. Ambient Temperature Rev. 1.2, 19-Nov-15 Document Number: 84210 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F P - Power Dissipation (mW) V V - Forward Voltage (V) F I - Forward Current (mA) F