VSMB294008RG, VSMB294008G www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, MQW FEATURES VSMB294008RG VSMB294008G Package type: surface mount Package form: GW, RGW Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.8 Peak wavelength: = 940 nm p High reliability High radiant power High radiant intensity DESCRIPTION Angle of half intensity: = 7 VSMB294008 series are infrared, 940 nm emitting diodes in Low forward voltage GaAlAs multi quantum well (MQW) technology with high Suitable for high pulse current operation radiant power and high speed, molded in clear, untinted Terminal configurations: gullwing or reserve gullwing plastic packages (with lens) for surface mounting (SMD). Package matches with detector VEMD2000X01 series APPLICATIONS Floor life: 4 weeks, MSL 2a, acc. J-STD-020 Data transmission Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Miniature light barrier Photointerrupters Optical switch Control and drive circuits Shaft encoders PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e P r VSMB294008RG 70 7 940 15 VSMB294008G 70 7 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMB294008RG Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VSMB294008G Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Surge forward current t = 100 s I 500 mA p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature according to fig. 10, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, leads 7 mm, soldered on PCB R 250 K/W thJA Rev. 1.1, 19-Nov-14 Document Number: 84228 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VSMB294008RG, VSMB294008G www.vishay.com Vishay Semiconductors 120 180 160 100 140 80 120 100 60 80 R = 250 K/W thJA R = 250 K/W thJA 40 60 40 20 20 0 0 0 1020 3040506070 8090100 0 10 203040 50607080 90 100 T - Ambient Temperature (C) 21343 21344 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.15 1.45 1.75 V F p F Forward voltage I = 500 mA, t = 100 s V -1.8 - V F p F Temperature coefficient of V I = 100 mA TK - -0.64 - mV/K F F VF Reverse current V = 5 V I - - 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -38- pF R J I = 100 mA, t = 100 s I 30 70 115 mW/sr F p e Radiant intensity I = 500 mA, t = 100 s I - 260 - mW/sr F p e Radiant power I = 100 mA, t = 100 s -40- mW F p e Temperature coefficient I = 100 mA TK - -0.43 - %/K F e of radiant power Angle of half intensity - 7 - deg Peak wavelength I = 30 mA 920 940 960 nm F p Spectral bandwidth I = 30 mA -25- nm F Temperature coefficient of I = 30 mA TK -0.25 - nm/K p F p Rise time I = 100 mA, 20 % to 80 % t -15- ns F r Fall time I = 100 mA, 20 % to 80 % t -15- ns F f Cut-off frequency I = 70 mA, I = 30 mA pp f -23- MHz DC AC c Rev. 1.1, 19-Nov-14 Document Number: 84228 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F