VSML3710 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES Package type: surface mount Package form: PLCC-2 Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 Peak wavelength: = 940 nm p High reliability High radiant power High radiant intensity 948553 Angle of half intensity: = 60 Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Package matched with IR emitter series VEMT3700 Floor life: 168 h, MSL 3, acc. J-STD-020 DESCRIPTION Lead (Pb)-free reflow soldering VSML3710 is an infrared, 940 nm emitting diode in GaAlAs, AEC-Q101 qualified MQW (multi quantum well) technology with high radiant Material categorization: for definitions of compliance power, molded in a PLCC-2 package for surface mounting please see www.vishay.com/doc 99912 (SMD). APPLICATIONS IR emitter in photointerrupters, sensors, and reflective sensors IR emitter in low space applications Household appliance Tactile keyboards PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) e p r VSML3710 9.5 60 940 15 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSML3710-GS08 Tape and reel MOQ: 7500 pcs, 1500 pcs/reel PLCC-2 VSML3710-GS18 Tape and reel MOQ: 8000 pcs, 8000 pcs/reel PLCC-2 Note MOQ: minimum order quantity Rev. 1.6, 22-Oct-14 Document Number: 81300 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSML3710 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 100 mA F Peak forward current t /T = 0.5, t = 100 s I 200 mA p p FM Surge forward current t = 100 s I 1A p FSM Power dissipation P 160 mW V Junction temperature T 100 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -40 to +100 C stg Soldering temperature Acc. figure 11, J-STD-020 T 260 C sd Thermal resistance junction/ambient J-STD-051, soldered on PCB R 250 K/W thJA 120 180 160 100 140 120 80 100 60 80 R = 250 K/W thJA R = 250 K/W thJA 40 60 40 20 20 0 0 0 10 203040 50607080 90 100 0 1020 3040506070 8090100 21343 T - Ambient Temperature (C) 21344 T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 100 mA, t = 20 ms V 1.35 1.6 V F p F Forward voltage I = 1 A, t = 100 s V 2.6 3 V F p F Temperature coefficient of V I = 1 mA TK -1.8 mV/K F F VF Reverse current V = 5 V I 100 A R R Junction capacitance V = 0 V, f = 1 MHz, E = 0 C 60 pF R j I = 100 mA, t = 20 ms I 49.5 20 mW/sr F p e Radiant intensity I = 1 A, t = 100 s I 70 mW/sr F p e Radiant power I = 100 mA, t = 20 ms 40 mW F p e Temperature coefficient of I = 100 mA TK -0.6 %/K e F e Angle of half intensity 60 deg Peak wavelength I = 100 mA 940 nm F p Spectral bandwidth I = 100 mA 30 nm F Temperature coefficient of I = 100 mA TK 0.2 nm/K p F p Rise time I = 100 mA t 15 ns F r Fall time I = 100 mA t 15 ns F f Rev. 1.6, 22-Oct-14 Document Number: 81300 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (mW) V I - Forward Current (mA) F