VS-MUR1020CTPbF, VS-MUR1020CT-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 10 A FRED Pt FEATURES Base common Ultrafast recovery time cathode 2 Low forward voltage drop 175 C operating junction temperature Low leakage current Designed and qualified according to 2 JEDEC -JESD 47 Common cathode Material categorization: Anode Anode Available TO-220AB 13 for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS VS-MUR.. series are the state of the art ultrafast recovery PRODUCT SUMMARY rectifiers specifically designed with optimized performance Package TO-220AB of forward voltage drop and ultrafast recovery time. I 2 x 5 A F(AV) The planar structure and the platinum doped life time V 200 V R control, guarantee the best overall performance, V at I 0.87 V F F ruggedness and reliability characteristics. t typ. See Recovery table rr These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well T max. 175 C J as freewheeling diode in low voltage inverters and chopper Diode variation Common cathode motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 200 V RRM per leg 5 Average rectified forward current I F(AV) total device Rated V , T = 149 C 10 R C A Non-repetitive peak surge current per leg I 50 FSM Rated V , square wave, 20 kHz R Peak repetitive forward current per leg I 10 FM T = 149 C C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 5 A, T = 125 C - 0.87 0.99 F J V Forward voltage V I = 10 A, T = 125 C - 1.02 1.20 F F J I = 10 A - 1.12 1.25 F V = V rated - - 10 R R Reverse leakage current I A R T = 150 C, V = V rated - - 250 J R R V = 200 V - 8 - pF Junction capacitance C T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 10-Jul-15 Document Number: 94076 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MUR1020CTPbF, VS-MUR1020CT-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 0.5 A, I = 1.0 A, I = 0.25 A - - 25 F R REC Reverse recovery time t ns rr T = 25 C -24 - J T = 125 C - 35 - J I = 5 A F T = 25 C - 3.3 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 5.0 - J V = 160 V R T = 25 C - 33 - J Reverse recovery charge Q nC rr T = 125 C - 76 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R -- 5 thJC junction to case per leg Thermal resistance, R -- 50 C/W thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth R -0.5 - thCS case to heatsink and greased -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-220AB MUR1020CT Revision: 10-Jul-15 Document Number: 94076 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000