VS-MUR820PbF, VS-MUR820-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt FEATURES Base Ultrafast recovery time cathode 2 Low forward voltage drop 175 C operating junction temperature Low leakage current Available Designed and qualified according to 3 1 JEDEC -JESD 47 Cathode Anode Material categorization: for definitions of compliance TO-220AC please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS VS-MUR820PbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of PRODUCT SUMMARY forward voltage drop and ultrafast recovery time. Package TO-220AC The planar structure and the platinum doped life time I 8 A F(AV) control, guarantee the best overall performance, V 200 V R ruggedness and reliability characteristics. V at I 0.895 V F F These devices are intended for use in the output rectification t typ. See Recovery table rr stage of SMPS, UPS, DC/DC converters as well as T max. 175 C J freewheeling diode in low voltage inverters and chopper Diode variation Single die motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONS MAX. UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I Total device, rated V , T = 150 C 8 F(AV) R C Non-repetitive peak surge current I 100 A FSM Peak repetitive forward current I Rated V , square wave, 20 kHz, T = 150 C 16 FM R C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 8 A - - 0.975 F Forward voltage V F I = 8 A, T = 150 C - - 0.895 F J V = V rated - - 5 R R Reverse leakage current I A R T = 150 C, V = V rated - - 250 J R R Junction capacitance C V = 200 V - 25 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 10-Jul-15 Document Number: 94523 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MUR820PbF, VS-MUR820-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - - 35 F F R I = 0.5 A, I = 1.0 A, I = 0.25 A - - 25 F R REC Reverse recovery time t ns rr T = 25 C -20 - J T = 125 C - 34 - J I = 8 A F T = 25 C - 1.7 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4.2 - J V = 160 V R T = 25 C - 23 - J Reverse recovery charge Q nC rr T = 125 C - 75 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, R --3.0 thJC junction to case Thermal resistance, R -- 50 C/W thJA junction to ambient Thermal resistance, Mounting surface, flat, smooth and R -0.5 - thCS case to heatsink greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-220AC MUR820 Revision: 10-Jul-15 Document Number: 94523 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000