VS-SD1100C16L Vishay

VS-SD1100C..C Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Hockey PUK Version), 1400 A FEATURES Wide current range High voltage ratings up to 3200 V High surge current capabilities Diffused junction Hockey PUK version Case style B-43 Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS B-43 Converters Power supplies Machine tool controls PRODUCT SUMMARY High power drives I 1400 A F(AV) Medium traction applications Package B-43 Circuit configuration Single diode MAJOR RATINGS AND CHARACTERISTICS SD1100C..C PARAMETER TEST CONDITIONS UNITS 04 to 20 25 to 32 1400 1100 A I F(AV) T 55 55 C hs 2500 2000 A I F(RMS) T 25 25 C hs 50 Hz 13 000 10 500 I A FSM 60 Hz 13 600 11 000 50 Hz 846 551 2 2 I t kA s 60 Hz 772 503 V 400 to 2000 2500 to 3200 V RRM Range T - 40 to 180 - 40 to 150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM RSM V , MAXIMUM REPETITIVE PEAK I MAXIMUM RRM RRM VOLTAGE NON-REPETITIVE PEAK REVERSE TYPE NUMBER REVERSE VOLTAGE AT T = T MAXIMUM J J VOLTAGE CODE V mA V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 VS-SD1100C..C 35 20 2000 2100 25 2500 2600 30 3000 3100 32 3200 3300 Revision: 14-Jan-14 Document Number: 93535 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD1100C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION SD1100C..C PARAMETER SYMBOL TEST CONDITIONS UNITS 04 to 20 25 to 32 1400 (795) 1100 (550) A Maximum average forward current 180 conduction, half sine wave I F(AV) at heatsink temperature Double side (single side) cooled 55 (85) 55 (85) C Maximum RMS forward current I 25 C heatsink temperature double side cooled 2500 2000 F(RMS) t = 10 ms 13 000 10 500 No voltage reapplied t = 8.3 ms 13 600 11 000 A Maximum peak, one-cycle forward, I FSM non-repetitive current t = 10 ms 10 930 8830 100 % V RRM reapplied Sinusoidal half wave, t = 8.3 ms 11 450 9250 initial T = T J J t = 10 ms 846 551 No voltage maximum reapplied t = 8.3 ms 772 503 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 598 390 100 % V RRM reapplied t = 8.3 ms 546 356 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 8460 5510 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 0.78 0.84 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.94 0.88 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 0.35 0.40 f1 F(AV) F(AV) J J slope resistance m High level value of forward r (I > x I ), T = T maximum 0.26 0.38 f2 F(AV) J J slope resistance I = 1500 A, T = T maximum pk J J Maximum forward voltage drop V 1.31 1.44 V FM t = 10 ms sinusoidal wave p THERMAL AND MECHANICAL SPECIFICATIONS SD1100C..C PARAMETER SYMBOL TEST CONDITIONS UNITS 04 to 20 25 to 32 Maximum junction operating T - 40 to 180 - 40 to 150 J temperature range C Maximum storage temperature range T - 55 to 200 Stg DC operation single side cooled 0.076 Maximum thermal resistance, R K/W thJ-hs junction to heatsink DC operation double side cooled 0.038 Mounting force, 10 % 9800 (1000) N (kg) Approximate weight 83 g Case style See dimensions - link at the end of datasheet B-43 R CONDUCTION thJ-hs SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.007 0.007 0.005 0.005 120 0.008 0.008 0.008 0.008 90 0.010 0.010 0.011 0.011 T = T maximum K/W J J 60 0.015 0.015 0.016 0.016 30 0.026 0.026 0.026 0.026 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJ-hs Revision: 14-Jan-14 Document Number: 93535 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000