VS-SD853C..S50K Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 990 A FEATURES High power fast recovery diode series 5.0 s recovery time High voltage ratings up to 4500 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation K-PUK (DO-200AC) Case style conform to JEDEC K-PUK (DO-200AC) Maximum junction temperature 125 C Designed and qualified for industrial level Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 990 A F(AV) Package K-PUK (DO-200AC) TYPICAL APPLICATIONS Circuit configuration Single Snubber diode for GTO High voltage freewheeling diode Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 990 A I F(AV) T 55 C hs 1800 A I F(RMS) T 25 C hs 50 Hz 19 000 I A FSM 60 Hz 19 900 50 Hz 1810 2 2 I t kA s 60 Hz 1652 V Range 3000 to 4500 V RRM 5.0 s t rr T 25 J C T -40 to +125 J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE PEAK V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 125 C J CODE V V mA 30 3000 3100 36 3600 3700 VS-SD853C..S50K 100 40 4000 4100 45 4500 4600 Revision: 11-Jan-18 Document Number: 93182 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD853C..S50K Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 990 (420) A Maximum average forward current 180 conduction, half sine wave I F(AV) at heatsink temperature Double side (single side) cooled 55 (85) C Maximum RMS forward current I 25 C heatsink temperature double side cooled 1800 F(RMS) t = 10 ms 19 000 No voltage reapplied t = 8.3 ms 19 900 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current t = 10 ms 16 000 50 % V RRM Sinusoidal half wave, reapplied t = 8.3 ms 16 750 initial T = T J J t = 10 ms 1805 No voltage maximum reapplied t = 8.3 ms 1645 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 1280 50 % V RRM reapplied t = 8.3 ms 1165 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 18 050 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.50 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.67 F(TO)2 F(AV) J J Low level value of forward r (16.7 % x x I < I < x I ), T = T maximum 0.70 f1 F(AV) F(AV) J J slope resistance mW High level value of forward r (I > x I ), T = T maximum 0.65 f2 F(AV) J J slope resistance I = 2000 A, T = 125 C pk J Maximum forward voltage drop V 2.90 V FM t = 10 ms sinusoidal wave p RECOVERY CHARACTERISTICS MAXIMUM VALUE TYPICAL VALUES TEST CONDITIONS AT T = 25 C AT T = 125 C J J I FM I pk CODE t rr t at 25 % I SQUARE dI/dt V t at 25 % I Q I rr RRM r rr RRM rr rr (s) PULSE (A/s) (V) (s) (C) (A) t dir (A) dt Q rr S50 5.0 1000 100 -50 6.5 1000 270 I RM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum junction operating T -40 to +125 J temperature range C Maximum storage temperature range T -40 to +150 Stg DC operation single side cooled 0.04 Maximum thermal resistance, R K/W thJ-hs junction to heatsink DC operation double side cooled 0.02 Mounting force, 10 % 22 250 (2250) N (kg) Approximate weight 425 g Case style See dimensions - link at the end of datasheet K-PUK (DO-200AC) R CONDUCTION thJ-hs SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.0017 0.0019 0.0012 0.0012 120 0.0021 0.0021 0.0021 0.0021 90 0.0026 0.0027 0.0029 0.0029 T = T maximum K/W J J 60 0.039 0.0039 0.0041 0.0041 30 0.0067 0.0067 0.0068 0.0068 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJ-hs Revision: 11-Jan-18 Document Number: 93182 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000