VS-T20HF220 www.vishay.com Vishay Semiconductors Power Rectifier Diodes (T-Modules), 2200 V, 20 A FEATURES Electrically isolated base plate 2200 V RRM Industrial standard packaging UL approved file E78996 Simplified mechanical designs, rapid assembly Large creepage distances Designed and qualified for industrial level D-55 (T-module) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS I 20 A F(AV) These series of D-55 (T-modules) use standard recovery Type Modules - diode, high voltage power rectifier diodes. The semiconductors are electrically V 2200 V RRM isolated from the metal base, allowing common heatsink Package D-55 (T-module) and compact assembly to be built. Circuit configuration Single diode Applications include power supplies, battery charges, welders, motor controls, and solar panel application. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 20 A I F(AV) T 85 C C I 31 F(RMS) 50 Hz 450 A I FSM 60 Hz 470 50 Hz 1015 2 2 I t A s 60 Hz 920 2 2 I t 10 125 A s V 2200 V RRM T -40 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM RRM RSM I MAXIMUM RRM TYPE VOLTAGE REPETITIVE PEAK NON-REPETITIVE PEAK AT T = 150 C J NUMBER CODE REVERSE VOLTAGE REVERSE VOLTAGE mA V V VS-T20HF220 22 2200 2250 18 Revision: 05-Jan-18 Document Number: 94709 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-T20HF220 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS 20 A Maximum average forward current at case I 180 conduction, half sine wave F(AV) temperature 85 C Maximum RMS forward current I 31A F(RMS) t = 10 ms 450 No voltage reapplied t = 8.3 ms 470 Maximum peak, one-cycle forward, I A FSM non-repetitive surge current t = 10 ms 380 100 % V RRM Sinusoidal half reapplied t = 8.3 ms 400 wave, initial t = 10 ms 1015 No voltage T = T maximum J J reapplied t = 8.3 ms 920 2 2 2 Maximum I t for fusing I t A s t = 10 ms 715 100 % V RRM reapplied t = 8.3 ms 650 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 10 125 A s (16.7 % x x I < I < x I ), F(AV) F(AV) Low level value of threshold voltage V 0.77 F(TO)1 T maximum J V High level value of threshold voltage V (I > x I ), T maximum 0.89 F(TO)2 F(AV) J (16.7 % x x I < I < x I ), F(AV) F(AV) Low level value of forward slope resistance r 8.5 f1 T maximum J m High level value of forward slope resistance r (I > x I ), T maximum 6.7 f2 F(AV) J I = 60 A, T = 25 C, t = 400 s square pulse FM J p Maximum forward voltage drop V 1.50 V FM 2 Average power = V x I + r x (I ) F(TO) F(AV) f F(RMS) BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum peak reverse I T = 150 C 18 mA RRM J leakage current 50 Hz, circuit to base, all terminals shorted RMS isolation voltage V 3500 V ISOL T = 25 C, t = 1 s J THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUESUNITS Maximum junction operating and storage T , T -40 to +150 C J Stg temperature range Maximum thermal resistance, junction to case R DC operation 2.53 thJC per junction K/W Maximum thermal resistance, case to heatsink R Mounting surface smooth, flat and greased 0.2 thCS (1) to heatsink M3.5 mounting screws 1.3 10 % Non-lubricated Mounting torque, 10 % Nm threads terminals M5 screw terminals 3 10 % Approximate weight See dimensions - link at the end of datasheet 54 g Case style D-55 (T-module) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound R CONDUCTION PER JUNCTION SINUSOIDAL CONDUCTION AT T MAXIMUM RECTANGULAR CONDUCTION AT T MAXIMUM J J DEVICES UNITS 180 120 90 60 30 180 120 90 60 30 T20HF... 0.29 0.34 0.43 0.64 1.10 0.20 0.35 0.47 0.67 1.11 K/W Note Table shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 05-Jan-18 Document Number: 94709 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000