T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A FEATURES Electrically isolated base plate Types up to 1200 V RRM RoHS 3500 V isolating voltage COMPLIANT RMS Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved RoHS compliant D-55 Designed and qualified for industrial level DESCRIPTION These series of T-modules are intended for general purpose applications such as battery chargers, welders and plating PRODUCT SUMMARY equipment, regulated power supplies and temperature and I 50 A/70 A/90 A T(AV) speed control circuits. The semiconductors are electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T50RIA T70RIA T90RIA UNITS I 70 C 50 70 90 A T(AV) I 80 110 141 A T(RMS) 50 Hz 1310 1660 1780 I A TSM 60 Hz 1370 1740 1870 50 Hz 8550 13 860 15 900 2 2 I t A s 60 Hz 7800 12 650 14 500 2 2 I t 85 500 138 500 159 100 A s V Range 100 to 1200 V RRM T - 40 to 125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , MAXIMUM REPETITIVE RRM DRM V , MAXIMUM NON-REPETITIVE I /I MAXIMUM RSM RRM DRM TYPE VOLTAGE PEAK REVERSE AND PEAK PEAK REVERSE VOLTAGE AT T = 25 C J NUMBER CODE OFF-STATE VOLTAGE V A V 10 100 150 20 200 300 40 400 500 T50RIA T70RIA 100 60 600 700 T90RIA 80 800 900 100 1000 1100 120 1200 1300 Document Number: 93756 For technical questions, contact: ind-modules vishay.com www.vishay.com Revision: 03-Jun-08 1 T..RIA Series Medium Power Phase Control Thyristors Vishay High Power Products (Power Modules), 50 A/70 A/90 A ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS T50RIAT70RIAT90RIAUNITS 50 70 90 A Maximum average on-state current I 180 conduction, half sine wave T(AV) at case temperature 70 70 70 C Maximum RMS on-state current I 80110141A T(RMS) t = 10 ms 1310 1660 1780 No voltage Maximum peak, one-cycle reapplied t = 8.3 ms 1370 1740 1870 on-state, non-repetitive I A TSM t = 10 ms 1100 1400 1500 surge current 100 % V RRM reapplied t = 8.3 ms 1150 1460 1570 Sine half wave, initial T = T maximum t = 10 ms J J 8550 13 860 15 900 No voltage reapplied t = 8.3 ms 7800 12 650 14 500 2 2 2 Maximum I t for fusing I t A s t = 10 ms 6050 9800 11 250 100 % V RRM reapplied t = 8.3 ms 5520 8950 10 270 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 A s Low level value of V (16.7 % x x I < I < x I ), T maximum 0.97 0.77 0.78 T(TO)1 T(AV) T(AV) J threshold voltage V High level value of V (I > x I ), T maximum 1.13 0.88 0.88 T(TO)2 T(AV) J threshold voltage Low level value of r (16.7 % x x I < I < x I ), T maximum 4.1 3.6 2.9 t1 T(AV) T(AV) J on-state slope resistance m High level value of r (I > x I ), T maximum 3.3 3.2 2.6 t2 T(AV) J on-state slope resistance I = x I , T = 25 C, t = 400 s square TM T(AV) J p Maximum on-state voltage drop V 1.60 1.55 1.55 V TM 2 Average power = V x I + r x (I ) T(TO) T(AV) f T(RMS) I = x I , T = 25 C, t = 400 s square TM T(AV) J p Maximum forward voltage drop V 1.60 1.55 1.55 V FM 2 Average power = V x I + r x (I ) T(TO) T(AV) f T(RMS) Maximum holding current I Anode supply = 6 V, initial I = 30 A, T = 25 C 200 200 200 H T J mA Anode supply = 6 V, resistive load = 10 Maximum latching current I 400 400 400 L Gate pulse: 10 V, 100 s, T = 25 C J SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = 25 C, V = 50 % V , I = 50 A J d DRM TM Typical turn-on time t 0.9 gd I = 500 mA, t 0.5, t 6 s g r p Typical reverse recovery time t T = 125 C, I = 50 A, t = 300 s, dI/dt = 10 A/s 3 s rr J TM p T = T maximum, I = 50 A, t = 300 s J J TM p Typical turn-off time t 110 q -dI/dt = 15 A/s, V = 100 V, linear to 80 % V R DRM www.vishay.com For technical questions, contact: ind-modules vishay.com Document Number: 93756 2 Revision: 03-Jun-08