VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series www.vishay.com Vishay Semiconductors Power Rectifiers Diodes (T-modules), 40 A to 110 A FEATURES Electrically isolated base plate Types up to 1200 V RRM 3500 V isolating voltage RMS Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved Designed and qualified for industrial level D-55 (T-module) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS These series of T-modules use standard recovery power I 40 A to 110 A F(AV) rectifier diodes. The semiconductors are electrically isolated Type Modules - diode, high voltage from the metal base, allowing common heatsink and V 100 V to 1200 V RRM compact assembly to be built. Applications include power supplies, battery charges, Package D-55 (T-module) welders, motor controls and general industrial current Circuit configuration Single diode rectification. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T40HF T70HF T85HF T110HF UNITS 40 70 85 110 A I F(AV) T 85 85 85 85 C C I 63 110 134 173 A F(RMS) 50 Hz 570 1200 1700 2000 I A FSM 60 Hz 600 1250 1800 2100 50 Hz 1630 7100 14 500 20 500 2 2 I t A s 60 Hz 1500 6450 13 500 18 600 2 2 I t 16 300 70 700 148 700 204 300 A s V 100 to 1200 V RRM T -40 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM TYPE VOLTAGE PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 25 C J NUMBER CODE V V A 10 100 150 20 200 300 VS-T40HF... 40 400 500 VS-T70HF... 60 600 700 100 VS-T85HF... 80 800 900 VS-T110HF... 100 1000 1100 120 1200 1300 Revision: 04-May-17 Document Number: 93587 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-T40HF..., VS-T70HF..., VS-T85HF..., VS-T110HF... Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS T40HF T70HF T85HF T110HF 40 70 85 110 A Maximum average forward I 180 conduction, half sine wave F(AV) current at case temperature 85 85 85 85 C Maximum RMS forward current I 63110134173A F(RMS) t = 10 ms No voltage 570 1200 1700 2000 Maximum peak, one-cycle reapplied t = 8.3 ms 600 1250 1800 2100 forward, non-repetitive surge I A FSM t = 10 ms 100 % V 480 1000 1450 1700 RRM Sinusoidal current reapplied t = 8.3 ms 500 1050 1500 1780 half wave, initial T = t = 10 ms No voltage J 1630 7100 14 500 20 500 T maximum reapplied J t = 8.3 ms 1500 6450 13 500 18 600 2 2 2 Maximum I t for fusing I t A s t = 10 ms 100 % V 1150 5000 10 500 14 500 RRM reapplied t = 8.3 ms 1050 4570 9600 13 200 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 16 300 70 700 148 700 204 300 A s Low level value of threshold (16.7 % x x I < I < x I ), F(AV) F(AV) V 0.66 0.76 0.68 0.68 F(TO)1 voltage T maximum J V High level value of threshold V (I > x I ), T maximum 0.84 0.95 0.90 0.86 F(TO)2 F(AV) J voltage Low level value of forward slope (16.7 % x x I < I < x I ), F(AV) F(AV) r 4.3 2.4 1.76 1.56 f1 resistance T maximum J m High level value of forward slope r (I > x I ), T maximum 3.1 1.7 1.08 1.12 f2 F(AV) J resistance I = x I , T = 25 C, FM F(AV) J Maximum forward voltage drop V t = 400 s square pulse 1.30 1.35 1.27 1.35 V FM p 2 Average power = V x I + r x (I ) F(TO) F(AV) f F(RMS) BLOCKING PARAMETER SYMBOL TEST CONDITIONS T40HF T70HF T85HF T110HF UNITS Maximum peak reverse I T = 150 C 15 15 20 20 mA RRM J leakage current 50 Hz, circuit to base, all terminals shorted RMS isolation voltage V 3500 3500 3500 3500 V ISOL T = 25 C, t = 1 s J THERMAL AND MECHANICAL SPECIFICATIONS VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS T40HF T70HF T85HF T110HF Maximum junction operating T , T -40 to +150 C J Stg and storage temperature range Maximum thermal resistance, R DC operation 1.36 0.69 0.62 0.47 thJC junction to case per junction K/W Maximum thermal resistance, Mounting surface smooth, flat R 0.2 thCS case to heatsink and greased (1) to heatsink M3.5 mounting screws 1.3 10 % Mounting torque, Non-lubricated Nm 10 % threads terminals M5 screw terminals 3 10 % Approximate weight See dimensions - link at the end of datasheet 54 g Case style D-55 (T-module) Note (1) A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound Revision: 04-May-17 Document Number: 93587 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000