VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (T-Modules), 40 A, 70 A, 85 A FEATURES Fast recovery time characteristics Electrically isolated base plate 3500 V isolating voltage RMS Standard JEDEC package Simplified mechanical designs, rapid assembly Large creepage distances UL E78996 approved Designed and qualified for industrial level D-55 (T-module) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION The series of T-modules uses fast recovery power diodes in a single diode configuration. The semiconductors are PRODUCT SUMMARY electrically isolated from the metal base, allowing common heatsink and compact assemblies to be built. I 40 A, 70 A, 85 A F(AV) These single diode modules can be used in conjunction with Type Modules - Diode, Fast the thyristor modules as a freewheel diode. Application includes self-commutated inverters, DC choppers, motor control, inductive heating and electronic welders. These modules are intended for those applications where very fast recovery characteristics are required and for general power switching applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T40HFL T70HFL T85HFL UNITS 40 70 85 A I F(AV) T 70 70 70 C C I 63 110 133 A F(RMS) 50 Hz 475 830 1300 I A FSM 60 Hz 500 870 1370 50 Hz 1130 3460 8550 2 2 I t A s 60 Hz 1030 3160 7810 V Range 100 to 1000 V RRM t Range 200 to 1000 ns rr T Range -40 to +125 C J Revision: 20-Dec-16 Document Number: 93184 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-T40HFL, VS-T70HFL, VS-T85HFL Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM, RSM RRM t TYPE VOLTAGE rr PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = 25 C J NUMBER CODE CODE V V A 10 S02, S05, S10 100 150 20 S02, S05, S10 200 300 VS T40HFL.. 40 S02, S05, S10 400 500 VS T70HFL.. 100 60 S02, S05, S10 600 700 VS T85HFL.. 80 S05, S10 800 900 100 S05, S10 1000 1100 FORWARD CONDUCTION VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS T40HFL T70HFL T85HFL 40 70 85 A Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 70 C Maximum RMS forward current I 63 110 133 A F(RMS) t = 10 ms 475 830 1300 No voltage reapplied t = 8.3 ms 500 870 1370 Maximum peak, one-cycle forward, I A FSM t = 10 ms 100 % 400 700 1100 non-repetitive surge current V RRM t = 8.3 ms 420 730 1150 reapplied Sinusoidal half wave, initial T = T maximum t = 10 ms J J 1130 3460 8550 No voltage reapplied t = 8.3 ms 1030 3160 7810 2 2 2 Maximum I t for fusing I t A s t = 10 ms 100 % 800 2450 6050 V RRM t = 8.3 ms 730 2230 5520 reapplied 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 11 300 34 600 85 500 A s Low level value of threshold voltage V T = 25 C, (16.7 % x x I < I < x I ) 0.82 0.87 0.84 F(TO)1 J F(AV) F(AV) V High level value of threshold V T = 25 C, (I > x I ) 0.84 0.90 0.86 F(TO)2 J F(AV) voltage Low level value of forward slope r T = 25 C, (16.7 % x x I < I < x I ) 7.0 2.77 2.15 f1 J F(AV) F(AV) resistance m High level value of forward r T = 25 C, (I > x I ) 6.8 2.67 2.07 f2 J F(AV) slope resistance I = x I , T = 25 C, t = 400 s square wave FM F(AV) J p Maximum forward voltage drop V 1.60 1.73 1.55 V FM 2 Average power = V x I + r x (I ) F(TO) F(AV) f F(RMS) REVERSE RECOVERY CHARACTERISTICS (1) PARAMETER SYMBOL TEST CONDITIONS T40HFL T70HFL T85HFL UNITS S02S05 S10S02 S05S10 S02S05 S10 T = 25 C, -dI /dt = 100 A/s J F 70 110 270 70 110 270 80 120 290 I = 1 A to V = 30 V F R Maximum reverse t ns rr recovery time T = 25 C, -dI /dt = 25 A/s J F 200 500 1000 200 500 1000 200 500 1000 I = x rated I , V = - 30 V FM F(AV) R T = 25 C, -dI /dt = 100 A/s J F 0.25 0.4 1.35 0.25 0.4 1.35 0.3 0.6 1.6 I = 1 A to V = 30 V F R Maximum reverse Q C rr recovery charge T = 25 C, -dI /dt = 25 A/s J F 0.55 2.0 8.0 0.6 2.1 8.5 0.8 3.5 1.5 I = x rated I , V = - 30 V FM F(AV) R Note (1) Tested on LEM 300 A diodemeter tester Revision: 20-Dec-16 Document Number: 93184 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000