VS-SD600N/R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 600 A FEATURES Wide current range High voltage ratings up to 3200 V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Compression bonded encapsulations B-8 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS Converters I 600 A F(AV) Power supplies Package B-8 Machine tool controls Circuit configuration Single High power drives Medium traction applications MAJOR RATINGS AND CHARACTERISTICS SD600N/R PARAMETER TEST CONDITIONS UNITS 04 to 20 22 to 32 600 600 A I F(AV) T 92 54 C C I 940 940 F(RMS) 50 Hz 13 000 10 500 A I FSM 60 Hz 13 600 11 000 50 Hz 845 551 2 2 I t kA s 60 Hz 772 503 V Range 400 to 2000 2200 to 3200 V RRM T -40 to +180 -40 to +150 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM J J CODE V V mA 04 400 500 08 800 900 12 1200 1300 16 1600 1700 VS-SD600N/R 35 20 2000 2100 22 2200 2300 28 2800 2900 32 3200 3300 Revision: 11-Jan-18 Document Number: 93551 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD600N/R Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION SD600N/R PARAMETER SYMBOL TEST CONDITIONS UNITS 04 to 20 22 to 32 600 A 92 54 C Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 570 375 A 100 C Maximum RMS forward current I DC at T = 75 C (04 to 20), T = 36 C (25 to 32) 940 F(RMS) C C t = 10 ms 13 000 10 500 No voltage reapplied t = 8.3 ms 13 600 11 000 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current t = 10 ms 10 900 8830 100 % V RRM reapplied t = 8.3 ms 11 450 9250 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 845 551 No voltage reapplied t = 8.3 ms 772 503 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 598 390 100 % V RRM reapplied t = 8.3 ms 546 356 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 8450 5510 kA s (16.7 % x x I < I < x I ), F(AV) F(AV) Low level value of threshold voltage V 0.78 0.84 F(TO)1 T = T maximum J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.87 0.88 F(TO)2 F(AV) J J Low level value of forward (16.7 % x x I < I < x I ), F(AV) F(AV) r 0.35 0.40 f1 slope resistance T = T maximum J J mW High level value of forward r (I > x I ), T = T maximum 0.31 0.38 f2 F(AV) J J slope resistance I = 1500 A, T = T maximum, pk J J Maximum forward voltage drop V 1.31 1.44 V FM t = 10 ms sinusoidal wave p THERMAL AND MECHANICAL SPECIFICATIONS SD600N/R PARAMETER SYMBOL TEST CONDITIONS UNITS 04 to 20 22 to 32 Maximum junction operating T -40 to 180 -40 to 150 J temperature range C Maximum storage temperature range T -55 to 200 Stg Maximum thermal resistance, R DC operation 0.1 thJC junction to case K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.04 thCS case to heatsink Maximum allowed Not-lubricated threads 50 Nm mounting torque 10 % Approximate weight 454 g Case style See dimensions (link at the end of datasheet) B-8 R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.012 0.008 120 0.014 0.014 90 0.017 0.019 T = T maximum K/W J J 60 0.025 0.026 30 0.042 0.042 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 11-Jan-18 Document Number: 93551 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000