VS-SD400N/R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, (Stud Version), 400 A FEATURES Wide current range High voltage ratings up to 2400 V High surge current capabilities Stud cathode and stud anode version Standard JEDEC types Compression bonded encapsulations DO-9 (DO-205AB) Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS Converters PRIMARY CHARACTERISTICS Power supplies I 400 A Machine tool controls F(AV) Package DO-9 (DO-205AB) High power drives Circuit configuration Single Medium traction applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 480 A I F(AV) T 120 C C I 630 F(RMS) 50 Hz 8250 A I FSM 60 Hz 8640 50 Hz 340 2 2 I t kA s 60 Hz 311 V Range 1600 to 2400 V RRM T -40 to +190 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = T MAXIMUM J J CODE V V mA 16 1600 1700 VS-SD400N/R 20 2000 2100 15 24 2400 2500 Revision: 28-Apr-2020 Document Number: 93548 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD400N/R Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 400 A 120 C Maximum average forward current I 180 conduction, half sine wave F(AV) at case temperature 480 A 100 C Maximum RMS forward current I DC at 110 C case temperature 630 F(RMS) t = 10 ms 8250 No voltage reapplied t = 8.3 ms 8640 A Maximum peak, one-cycle forward, I FSM non-repetitive surge current t = 10 ms 6940 100 % V RRM Sinusoidal half wave, reapplied t = 8.3 ms 7270 initial t = 10 ms 340 No voltage T = T maximum J J reapplied t = 8.3 ms 311 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 241 100 % V RRM reapplied t = 8.3 ms 220 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 3400 kA s (16.7 % x x I < I < x I ), F(AV) F(AV) Low level value of threshold voltage V 0.80 F(TO)1 T = T maximum J J V High level value of threshold voltage V (I > x I ), T = T maximum 0.85 F(TO)2 F(AV) J J Low level value of forward (16.7 % x x I < I < x I ), F(AV) F(AV) r 0.55 f1 slope resistance T = T maximum J J mW High level value of forward r (I > x I ), T = T maximum 0.51 f2 F(AV) J J slope resistance I = 1500 A, T = T maximum, pk J J Maximum forward voltage drop V 1.62 V FM t = 10 ms sinusoidal wave p THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction operating T -40 to +190 J temperature range C Maximum storage temperature range T -55 to +200 Stg Maximum thermal resistance, R DC operation 0.11 thJC junction to case K/W Maximum thermal resistance, R Mounting surface, smooth, flat and greased 0.04 thCS case to heatsink Maximum allowed Not-lubricated threads 27 Nm mounting torque 10 % Approximate weight 250 g Case style See dimensions (link at the end of datasheet DO-9 (DO-205AB) R CONDUCTION thJC CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.020 0.013 120 0.023 0.023 90 0.029 0.031 T = T maximum K/W J J 60 0.042 0.044 30 0.073 0.074 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJC Revision: 28-Apr-2020 Document Number: 93548 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000