VS-SD403C..C Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 430 A FEATURES High power fast recovery diode series 1.0 s to 1.5 s recovery time High voltage ratings up to 1600 V High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC A-PUK (DO-200AA) A-PUK (DO-200AA) Maximum junction temperature 125 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS I 430 A F(AV) TYPICAL APPLICATIONS Package A-PUK (DO-200AA) Snubber diode for GTO Circuit configuration Single High voltage freewheeling diode Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS 430 A I F(AV) T 55 C hs 675 A I F(RMS) T 25 C hs 50 Hz 6180 I A FSM 60 Hz 6470 50 Hz 191 2 2 I t kA s 60 Hz 175 V Range 400 to 1600 V RRM 1.0, 1.5 s t rr T 25 J C T -40 to +125 J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE PEAK V , MAXIMUM I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT T = 125 C J CODE V V mA 04 400 500 VS-SD403C..S10C 08 800 900 10 1000 1100 35 12 1200 1300 VS-SD403C..S15C 14 1400 1500 16 1600 1700 Revision: 15-Jan-18 Document Number: 93175 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-SD403C..C Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 430 (210) A Maximum average forward current 180 conduction, half sine wave I F(AV) at heatsink temperature Double side (single side) cooled 55 (75) C Maximum RMS current I 25 C heatsink temperature double side cooled 675 F(RMS) t = 10 ms 6180 No voltage reapplied A t = 8.3 ms 6470 Maximum peak, one-cycle , I FSM non-repetitive forward current t = 10 ms 5200 100 % V RRM reapplied t = 8.3 ms 5445 Sinusoidal half wave, initial T = T maximum t = 10 ms J J 191 No voltage reapplied t = 8.3 ms 175 2 2 2 Maximum I t for fusing I t kA s t = 10 ms 135 100 % V RRM reapplied t = 8.3 ms 123 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 1910 kA s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T = T maximum 1.00 F(TO)1 F(AV) F(AV) J J V High level value of threshold voltage V (I > x I ), T = T maximum 1.20 F(TO)2 F(AV) J J Low level of forward slope resistance r (16.7 % x x I < I < x I ), T = T maximum 0.56 f1 F(AV) F(AV) J J m High level of forward slope resistance r (I > x I ), T = T maximum 0.70 f2 F(AV) J J Maximum forward voltage drop V I = 1350 A, T = 25 C t = 10 ms sinusoidal wave 1.83 V FM pk J p RECOVERY CHARACTERISTICS MAXIMUM VALUE TYPICAL VALUES TEST CONDITIONS AT T = 25 C AT T = 125 C J J I I FM pk CODE t trr AT 25 % I dI/dt trr AT 25 % I RRM SQUARE V RRM Q I rr r rr rr PULSE (V) (C) (A) (s) (A/s) (s) t (A) dir dt Q rr S10 1.0 2.4 52 33 750 25 -30 I RM(REC) S15 1.5 2.9 90 44 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum operating temperature range T -40 to 125 J C Maximum storage temperature range T -40 to 150 Stg Maximum thermal resistance, DC operation single side cooled 0.16 R K/W thJ-hs junction to heatsink DC operation double side cooled 0.08 Mounting force, 10 % 4900 (500) N (kg) Approximate weight 70 g Case style See dimensions - link at the end of datasheet A-PUK (DO-200AA) R CONDUCTION thJ-hs SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION CONDUCTION ANGLE TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.010 0.011 0.008 0.008 120 0.012 0.013 0.013 0.013 90 0.016 0.016 0.018 0.018 T = T maximum K/W J J 60 0.024 0.024 0.025 0.025 30 0.042 0.042 0.042 0.042 Note The table above shows the increment of thermal resistance R when devices operate at different conduction angles than DC thJ-hs Revision: 15-Jan-18 Document Number: 93175 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000