VS-T..RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Power Modules), 50 A, 70 A, 90 A FEATURES Electrically isolated base plate Types up to 1200 V RRM 3500 V isolating voltage RMS Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved D-55 Designed and qualified for industrial level Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package D-55 DESCRIPTION Diode variation Single SCR These series of T-modules are intended for general purpose I 50 A, 70 A, 90 A T(AV) applications such as battery chargers, welders and plating V /V 100 V, 1200 V DRM RRM equipment, regulated power supplies and temperature and V 1.55 V TM speed control circuits. The semiconductors are electrically I 120 mA GT isolated from the metal base, allowing common heatsinks T -40 C to +125 C J and compact assemblies to be built. Type Modules - Thyristor, Standard MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS T50RIA T70RIA T90RIA UNITS I 70 C 50 70 90 A T(AV) I 80 110 141 A T(RMS) 50 Hz 1310 1660 1780 I A TSM 60 Hz 1370 1740 1870 50 Hz 8550 13 860 15 900 2 2 I t A s 60 Hz 7800 12 650 14 500 2 2 I t 85 500 138 500 159 100 A s V Range 100 to 1200 100 to 1200 100 to 1200 V RRM T -40 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V /V , V , MAXIMUM RRM DRM RSM I /I MAXIMUM RRM DRM TYPE VOLTAGE MAXIMUM REPETITIVE PEAK REVERSE NON-REPETITIVE PEAK REVERSE AT T = 25 C J NUMBER CODE AND PEAK OFF-STATE VOLTAGE VOLTAGE A V V 10 100 150 20 200 300 40 400 500 VS-T50RIA VS-T70RIA 60 600 700 100 VS-T90RIA 80 800 900 100 1000 1100 120 1200 1300 Revision: 20-Dec-16 Document Number: 93756 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-T..RIA Series www.vishay.com Vishay Semiconductors ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS T50RIAT70RIAT90RIAUNITS 50 70 90 A Maximum average on-state current at I 180 conduction, half sine wave T(AV) case temperature 70 70 70 C Maximum RMS on-state current I 80110141A T(RMS) t = 10 ms 1310 1660 1780 No voltage reapplied t = 8.3 ms 1370 1740 1870 Maximum peak, one-cycle on-state, I A TSM non-repetitive surge current t = 10 ms 1100 1400 1500 100 % V RRM reapplied Sine half wave, t = 8.3 ms 1150 1460 1570 initial t = 10 ms 8550 13 860 15 900 T = T maximum J J No voltage reapplied t = 8.3 ms 7800 12 650 14 500 2 2 2 Maximum I t for fusing I t A s t = 10 ms 6050 9800 11 250 100 % V RRM reapplied t = 8.3 ms 5520 8950 10 270 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 A s Low level value of threshold voltage V (16.7 % x x I < I < x I ), T maximum 0.97 0.77 0.78 T(TO)1 T(AV) T(AV) J V High level value of threshold voltage V (I > x I ), T maximum 1.13 0.88 0.88 T(TO)2 T(AV) J Low level value of on-state slope r (16.7 % x x I < I < x I ), T maximum 4.1 3.6 2.9 t1 T(AV) T(AV) J resistance m High level value of on-state slope r (I > x I ), T maximum 3.3 3.2 2.6 t2 T(AV) J resistance I = x I , T = 25 C, t = 400 s square TM T(AV) J p Maximum on-state voltage drop V 1.60 1.55 1.55 V TM 2 Average power = V x I + r x (I ) T(TO) T(AV) f T(RMS) I = x I , T = 25 C, t = 400 s square TM T(AV) J p Maximum forward voltage drop V 1.60 1.55 1.55 V FM 2 Average power = V x I + r x (I ) T(TO) T(AV) f T(RMS) Maximum holding current I Anode supply = 6 V, initial I = 30 A, T = 25 C 200 200 200 H T J mA Anode supply = 6 V, resistive load = 10 Maximum latching current I 400 400 400 L Gate pulse: 10 V, 100 s, T = 25 C J SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS T = 25 C, V = 50 % V , I = 50 A J d DRM TM Typical turn-on time t 0.9 gd I = 500 mA, t 0.5, t 6 s g r p Typical reverse recovery time t T = 125 C, I = 50 A, t = 300 s, dI/dt = 10 A/s 3 s rr J TM p T = T maximum, I = 50 A, t = 300 s, dI/dt = 15 A/s, J J TM p Typical turn-off time t 110 q V = 100 V, linear to 80 % V R DRM BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak reverse and off-state I , RRM T = T maximum 15 mA J J leakage current I DRM RMS isolation voltage V 50 Hz, circuit to base, all terminals shorted, T = 25 C, t = 1 s 3500 V ISOL J Critical rate of rise of (1) dV/dt T = T maximum, linear to 80 % rated V 500 V/s J J DRM off-state voltage Note (1) Available with dV/dt = 1000 V/s, to complete code add S90 i.e. T90RIA80S90 Revision: 20-Dec-16 Document Number: 93756 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000