BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES Glass passivated junction Hermetically sealed package Low reverse current AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 949539 APPLICATIONS MECHANICAL DATA Rectification diode Case: SOD-57 Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg ORDERING INFORMATION (Example) DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY BYT51M BYT51M-TR 5000 per 10 tape and reel 25 000 BYT51M BYT51M-TAP 5000 per ammopack 25 000 PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYT51A V = 50 V I = 1.5 A SOD-57 R F(AV) BYT51B V = 100 V I = 1.5 A SOD-57 R F(AV) BYT51D V = 200 V I = 1.5 A SOD-57 R F(AV) BYT51G V = 400 V I = 1.5 A SOD-57 R F(AV) BYT51J V = 600 V I = 1.5 A SOD-57 R F(AV) BYT51K V = 800 V I = 1.5 A SOD-57 R F(AV) BYT51M V = 1000 V I = 1.5 A SOD-57 R F(AV) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT BYT51A V = V 50 V R RRM BYT51B V = V 100 V R RRM BYT51D V = V 200 V R RRM Reverse voltage See electrical characteristics BYT51G V = V 400 V R RRM = repetitive peak reverse voltage BYT51J V = V 600 V R RRM BYT51K V = V 800 V R RRM BYT51M V = V 1000 V R RRM Peak forward surge current t = 10 ms, half sine wave I 50 A p FSM Repetitive peak forward current I 9A FRM l = 10 mm I 1.5 A F(AV) Average forward current On PC board I 1A F(AV) Junction and storage temperature range T = T -55 to +175 C j stg Non repetitive reverse avalanche energy l = 1 A E 20 mJ (BR)R R Rev. 2.0, 04-Nov-15 Document Number: 86028 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000BYT51A, BYT51B, BYT51D, BYT51G, BYT51J, BYT51K, BYT51M www.vishay.com Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, T = constant R 45 K/W L thJA Junction ambient On PC board with spacing 25 mm R 100 K/W thJA ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 A V - 0.95 1.1 V F F Forward voltage I = 1 A, T = 175 C V -- 1 V F j F V = V I -- 1 A R RRM R Reverse current V = V , T = 150 C I - - 100 A R RRM j R Reverse recovery time I = 0.5 A, I = 1 A, i = 0.25 A t -- 4 s F R R rr TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 120 1.6 ll R = 45 K/W thJA 1.4 l = 10 mm 100 1.2 80 1.0 T = constant L 0.8 60 0.6 40 R = 100 K/W 0.4 thJA PCB: d = 25 mm 20 0.2 0.0 0 0 20 40 60 80 100 120 140 160 180 0 5 10 15 202530 T - Ambient Temperature (C) 16324 949101 l - Lead Length (mm) amb Fig. 1 - Typ. Thermal Resistance vs. Lead Length Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 10 1000 V = V R RRM 1 100 T = 175 C j 0.1 T = 25 C 10 j 0.01 0.001 1 0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 175 V - Forward Voltage (V) 16323 F T - Junction Temperature (C) 16325 j Fig. 2 - Forward Current vs. Forward Voltage Fig. 4 - Reverse Current vs. Junction Temperature Rev. 2.0, 04-Nov-15 Document Number: 86028 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 R - Ther. Resist. Junction/Ambient (K/W) I - Forward Current (A) F thJA I - Reverse Current (A) I - Average Forward Current (A) R FAV